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| EIC2224-15 ISSUED 04/04/2006 2.20 - 2.40 GHz 15W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES * * * * * * * 2.20- 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 13.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC2224-15 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25OC) SYMBOLS P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression VDS = 10V, IDSQ 4.6A Gain at 1dB Compression VDS = 10V, IDSQ 4.6A f = 2.20-2.40GHz f = 2.20-2.40GHz Caution! ESD sensitive device. MIN 41.5 12.0 TYP 42.5 13.0 MAX UNIT dBm dB Gain Flatness f = 2.20-2.40GHz VDS = 10V, IDSQ 4.6A Power Added Efficiency at 1dB Compression VDS = 10V, IDSQ 4.6A f = 2.20-2.40GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 2.20-2.40GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 86mA 0.6 35 4.8 8.6 -2.5 1.7 5.4 10.8 -4.0 1.9 o dB % A A V C/W Note: 1. Tested with 25 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 192mA -33mA 42.0dBm 175 C o -65 to +175 C o CONTINUOUS2 10V -4V 64mA -11mA @ 3dB Compression 175 oC -65 to +175 oC 79W 79W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised April 2006 |
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