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HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Typical Applications
This HMC-ABH209 is ideal for: * Short Haul / High Capacity Links
Features
Output IP3: +25 dBm P1dB: +16 dBm Gain: 13 dB Supply Voltage: +5 V 50 Ohm Matched Input/Output
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LINEAR & POWER AMPLIFIERS - CHIP
* Wireless LAN Bridges * Military & Space
Die Size: 2.2 x 1.22 x 0.1 mm
Functional Diagram
General Description
The HMC-ABH209 is a high dynamic range, two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 55 and 65 GHz. The HMCABH209 provides 13 dB of gain, and an output power of +16 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-ABH209 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations, TA = +25 C, Vdd= 5V, Idd= 80 mA [2]
Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Saturated Output Power (Psat) Supply Current (Idd) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Idd total = 80 mA 12 Min. Typ. 55 - 65 13 13 17 16 25 18 80 Max. Units GHz dB dB dB dBm dBm dBm mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Linear Gain vs. Frequency
18 16 14
Fixtured Output Power vs. Frequency
20
18 Pout (dBm)
12 GAIN (dB) 10 8 6 4 2 0 50 52 54 56 58 60 62 64 66 68 FREQUENCY (GHz)
16
P1dB P5dB
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LINEAR & POWER AMPLIFIERS - CHIP
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14
12
10 55 56 57 58 59 60 61 62 63 64 65 FREQUENCY (GHz)
Input Return Loss vs. Frequency
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 50 52 54 56 58 60 62 64 66 68 FREQUENCY (GHz)
Output Return Loss vs. Frequency
20
18 RETURN LOSS (dB)
16
14
12
10 55 56 57 58 59 60 61 62 63 64 65 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Absolute Maximum Ratings
Drain Bias Voltage Gain Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 10 dBm -65 C to + 150 C +180 C
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LINEAR & POWER AMPLIFIERS - CHIP
RF Input Power Storage Temperature Chennel Temperature
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard WP - 18 Alternate [2]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002"
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic
2
RFOUT
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3
Vdd
Power Supply Voltage for the amplifier. See assembly for required external components.
4
Vgg
Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Assembly Diagram
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LINEAR & POWER AMPLIFIERS - CHIP
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-ABH209
v01.1207
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
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RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010" Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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