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| MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features * High-speed switching * No secondary breakdown Applications * Thin and thick film circuits * General purpose fast switching applications 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage (open drain) Drain Current Peak Drain Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGSO ID IDM Ptot Ptot Tj Ts 1) 2) Value 50 20 100 300 300 250 150 - 65 to + 150 Unit V V mA mA mW mW O C C O Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient 1) 2) Symbol RJA RJA Value 430 500 1) 2) Unit K/W K/W Device mounted on a ceramic substrate 10 X 8 X 0.7 mm. Device mounted on a printed-circuit board. SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 MMFTN20 Characteristics at Ta = 25 OC unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 10 A Drain-Source Leakage Current at VDS = 40 V Gate-Source Leakage Current at VGS = 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 100 mA at VGS = 5 V, ID = 100 mA at VGS = 2.5 V, ID = 10 mA Forward Transfer Admittance at VDS = 10 V, ID = 100 mA Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Turn-On Time at VGS = 0 to 10 V, VDD = 20 V, ID = 100 mA Turn-Off Time at VGS = 10 to 0 V, VDD = 20 V, ID = 100 mA Symbol V(BR)DSS IDSS IGSS VGS(th) Min. 50 0.4 40 Max. 1 100 1.8 15 20 30 15 15 5 5 10 Unit V A nA V RDS(on) |yfs| Ciss Coss Crss t(on) t(off) mS pF pF pF ns ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 |
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