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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION *With TO-220C package *Complement to type 2SD553 *Low collector saturation voltage APPLICATIONS *High current switching applications *Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -70 -50 -5 -7 1.5 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IE=0 ; VCB=-10V; f=1MHz IC=-1A ; VCE=-4V 70 30 MIN -50 2SB553 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V -0.2 -0.9 -0.4 -1.2 -30 -50 240 V V A A 250 10 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A; VCC?-30V RL=10@ 0.2 2.5 0.5 s s s hFE-1Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB553 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 4 |
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