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| MCT270, MCT271, MCT272, MCT273, MCT274, MCT275, MCT276, MCT277 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION The MCT27_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available l 2.54 7.0 6.0 1.2 7.62 6.62 Dimensions in mm 1 2 3 6 5 4 7.62 4.0 3.0 0.5 13 Max 0.26 3.0 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO (MCT275 only) BVCEO Collector-base Voltage BVCBO Emitter-base Voltage BVEBO Power Dissipation POWER DISSIPATION 60mA 6V 105mW APPLICATIONS DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l OPTION SM SURFACE MOUNT OPTION G 30V 80V 70V 5V 160mW 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92544m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) MCT27x (except MCT275) MCT275 ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Switching Time tON , tOFF MCT270,272 MCT271 MCT273 MCT274 MCT275,277 MCT276 Note 1 Note 2 MIN TYP MAX UNITS 1.2 3 10 1.5 V V A TEST CONDITION IF = 20mA IR = 10A VR = 3V IC = 1mA IC = 100A IE = 100A VCE = 10V Output 30 80 V V 70 5 50 V V nA 50 45 75 125 225 70 15 100 90 150 250 400 210 60 0.4 % % % % % % % % V VRMS VPK 10mA IF , 10V VCE 16mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , RL = 100, IC= 2mA, (fig 1) 5300 7500 5x1010 10 7 20 25 15 3.5 s s s s s s Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input RL = 100 Output Output 10% tr tf ton toff 10% 90% 90% FIG 1 7/12/00 DB92544m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 1.5 150 Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature IF = 10mA VCE = 10V 1.0 100 0.5 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 80 70 Relative current transfer ratio Forward current I F (mA) 60 50 40 30 20 10 -30 0 25 50 75 100 125 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Forward Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 10 20 50 VCE = 10V TA = 25C Ambient temperature TA ( C ) Collector Current vs. Collector-emitter Voltage (Normalised to MCT270,273,275,277) 50 Collector current I C (mA) 40 30 20 10 0 0 7/12/00 Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 Ambient temperature TA ( C ) 100 IF = 16mA IC = 2mA TA = 25C 50 30 20 15 10 IF = 5mA 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter saturation voltage V CE(SAT) (V) DB92544m-AAS/A2 |
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