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| 2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 1 Base n 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power Dissipation o PCM: 200 mW ( Tamb= 25 C) RoHS Compliant Product 3 2 Emitter n A L K BS 2 H J J K C Top View 1 L S V V G D H All Dimension in mm MAXIMUM RATINGS* TA=25ae unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 5 500 200 -55-150 Units V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) unless Test otherwise specified) MIN TYP MAX UNIT V V V conditions Ic=100A,IE=0 Ic=1mA,IB=0 IE=100A,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=100mA IC=500mA,IB=50mA VCE=5V,IC=20mA,f=100MHz VCB=10V,IE=0,f=1MHz 40 32 5 1 1 82 390 0.4 250 6.0 A A V MHz pF fT Cob CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com hFE P 82-180 CP Q 120-270 CQ R 180-390 CR Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors Typical characteristics 2SC2411 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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