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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD768 DESCRIPTION *With TO-220C package *Complement to type 2SB727 *DARLINGTON APPLICATIONS *For medium speed and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 6 10 40 150 -50~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA; RBE= IE=50mA; IC=0 IC=3A; IB=6mA IC=6A; IB=60mA IC=3A; IB=6mA IC=6A; IB=60mA VCB=120V; IE=0 VCE=100V; RBE= IC=3A ; VCE=3V 1000 MIN 120 7 TYP. 2SD768 MAX UNIT V V 1.5 3.0 2.0 3.5 100 10 20000 V V V V A A Switching times ton toff Turn-on time IC=3A;IB1=-IB2=6mA Turn-off time 3.0 s 1.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD768 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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