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APTGT35X120T3G
3 Phase bridge Trench + Field Stop IGBT(R) Power Module
15 16 19 20 18 23 25 29 30 22 28 R1 31 14
VCES = 1200V IC = 35A @ Tc = 80C
Application * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant
11 10 12
8 7
4 3 2 13
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 55 35 70 20 208 70A@1150V Unit V A
July, 2007 1-5 APTGT35X120T3G - Rev 0
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT35X120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 35A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.1 6.5 400 Unit A V V nA
5.0
1.7 2.0 5.8
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 35A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 35A RG = 27 VGE = 15V VBus = 600V Tj = 125C IC = 35A RG = 27 Min Typ 2.5 0.15 90 30 420 70 90 50 520 90 3.5 mJ 4.1 Max Unit nF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 2.6 3.2 1.8 300 380 360 1700
3.1 V ns
July, 2007 2-5 APTGT35X120T3G - Rev 0
di/dt =200A/s
nC
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APTGT35X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.6 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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17
28
APTGT35X120T3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 70 60 50 IC (A)
TJ=125C TJ = 125C VGE=17V VGE=13V VGE=15V
80 70 60
IC (A)
TJ=25C
50 40 30 20 10 0 0 0.5 1 1.5 2 VCE (V)
40 30 20 10 0
VGE=9V
2.5
3
3.5
0
1
2 VCE (V)
3
4
70 60 50 IC (A) 40 30 20 10 0 5 6
Transfert Characteristics 8
TJ=25C TJ=125C
Energy losses vs Collector Current 7 6 E (mJ) 5 4 3 2 1 0 0 10 20 30 40 IC (A) Reverse Bias Safe Operating Area 80 70 60 IC (A) 50 40 30 20
VGE=15V TJ=125C RG=27 VCE = 600V VGE = 15V RG = 27 TJ = 125C Eoff
Eon
7
8
9
10
11
12
50
60
70
80
VGE (V) Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 25 45 65 85 Gate Resistance (ohms) 105
VCE = 600V VGE =15V IC = 35A TJ = 125C
Eon
Eoff
10 0 0
400
800 VCE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9
0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
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0.7
APTGT35X120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 40
VCE=600V D=50% RG=27 TJ=125C TC=75C hard switching
Forward Characteristic of diode 80 70 60 50 IF (A) 40 30 20 10
TJ=25C TJ=125C
30
20
10
0 0 10 20 IC (A) 30 40 50
0 0 1 2 VF (V) 3 4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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