|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2551 DESCRIPTION *High Breakdown VoltageVCBO= 1700V (Min) *High Switching Speed *Low Saturation Voltage *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT 1700 V 600 V 5 V 5 A 10 A 2.5 A .cn mi e IC Collector Current- Continuous ICM Collector Current- Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2551 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product COB Output Capacitance w w w. IC= 4A; VCE= 5V IF= 5A IC= 0.1A; VCE= 10V sem isc .cn i 8 5 3 125 66 200 mA 28 10 2.0 V MHz IE= 0; VCB= 10V; ftest=1.0MHz pF Switching Times ts Storage Time ICP= 4A, IB1(end)= 0.8A, fH= 15.75kHz 10 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD2551 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |