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VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
FEATURES
* High voltage * Industrial standard package * Thick copper baseplate * UL E78996 approved * 3500 VRMS isolating voltage * Totally lead (Pb)-free
ADD-A-PAKTM
RoHS
COMPLIANT
* Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV) or IF(AV) 45/60 A
BENEFITS
* Up to 1600 V * Fully compatible TO-240AA * High surge capability * Easy mounting on heatsink * Al203 DBC insulator * Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM modules combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2 t I2t VRRM TStg TJ Range CHARACTERISTICS 85 C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VSK.41 45 100 850 890 3.61 3.30 36.1 400 to 1600 - 40 to 125 VSK.56 60 135 A 1310 1370 8.50 7.82 85.0 kA2s V C kA2s UNITS
Document Number: 94419 Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.41, .56..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.41/.56 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 C mA
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) TEST CONDITIONS 180 conduction, half sine wave, TC = 85 C VSK.41 VSK.56 UNITS
45
60
IO(RMS) t = 10 ms t = 8.3 ms
I(RMS)
or
I(RMS)
100 850
135 1310 1370 1100 1150 1450 1520 8.56 7.82 6.05 5.53 10.05 9.60 85.6 0.85 0.88 3.53 3.41 1.54 150 200 400 kA2s V m V A/s kA2s A
No voltage reapplied 100 % VRRM reapplied
Maximum peak, one-cycle non-repetitive on-state or forward current
ITSM or IFSM
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
Sinusoidal half wave, initial TJ = TJ maximum
890 715 750 940 985 3.61 3.30 2.56 2.33 4.42 4.03 36.1 0.88 0.91 5.90 5.74 1.81
TJ = 25 C no voltage reapplied No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum
Maximum I2t for fusing
I2t
TJ = 25 C, no voltage reapplied
Maximum
I2t
for fusing
I2t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL
t = 0.1 to 10 ms, no voltage reapplied Low level
(3)
Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current
High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV)
TJ = TJ maximum TJ = TJ maximum TJ = 25 C
TJ = 25 C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s TJ = 25 C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 C, anode supply = 6 V, resistive load
(3) (4)
mA
Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS))
16.7 % x x IAV < I < x IAV I > x IAV
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Document Number: 94419 Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 45/60 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 C VGT TJ = 25 C TJ = 125 C TJ = - 40 C Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger IGT VGD IGD TJ = 25 C TJ = 125 C TJ = 125 C, rated VDRM applied TJ = 125 C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VSK.41 VSK.56 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt (1) TEST CONDITIONS TJ = 125 C, gate open circuit 50 Hz, circuit to base, all terminals shorted TJ = 125 C, linear to 0.67 VDRM VSK.41 VSK.56 15 2500 (1 min) 3500 (1 s) 500 UNITS mA V V/s
Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per module Typical thermal resistance, case to heatsink to heatsink Mounting torque 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VSK.41 VSK.56 - 40 to 125 0.23 0.1 5 Nm 3 110 4 TO-240AA g oz. 0.20 UNITS C
K/W
R CONDUCTION PER JUNCTION
DEVICES VSK.41 VSK.56 SINE HALF WAVE CONDUCTION 180 0.11 0.09 120 0.13 0.11 90 0.17 0.13 60 0.23 0.18 30 0.34 0.27 180 0.09 0.07 RECTANGULAR WAVE CONDUCTION 120 0.14 0.11 90 0.18 0.14 60 0.23 0.19 30 0.34 0.28 UNITS C/W
Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94419 Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
Maximum Average On-state Power Los (W) s 100 DC 180 120 90 60 30
Maximum Allow able Case T empera ture (C)
130 VSK.41.. S eries R thJC (DC) = 0.46 K/ W 120
80
110
Cond uction Angle
60
RMS Limit
100 30 90 60 90 120 180
40
Conduction Period
20
VSK.41.. S eries Per Junction TJ = 125C 0 20 40 60 80
80 0 10 20 30 40 50 Average On-state Current (A)
0 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case T emperature (C)
130
120
Peak Half S Wave On-state Current (A) ine
VSK.41.. S eries R thJC (DC) = 0.46 K/ W
800
700
At Any Ra ted Loa d Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
110
Conduction Period
600
100
30 60 90 120 180 DC
500
90
400 VSK.41.. S eries Per Junction 300 1 10 100
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
80 0 20 40 60 80 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
Peak Half S ine Wave On-state Current (A)
70 60 50 40 30
Conduction Angle
900 800 700 600 500 400
180 120 90 60 30
R Limit MS
Ma ximum Non Repetitive Surge Current Versus Pulse T in Duration. Control ra Of Conduction May Not B Maintained . e Initial T = 125C J No Volta g e Rea pp lied R ted VRRM Reap p lied a
20 10 0 0 10 20 30 40 50 Average On-state Current (A) VSK.41.. S eries Per Junction TJ = 125C
VSK.41.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1
300 0.01
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94419 Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 45/60 A
Maximum T otal On-state Power Loss (W)
140
120 100 80 180 120 90 60 30
K/ W 0.3
0.5
A R th S
7 0. W K/
W K/
1. 5K /W
2K /W
3 K/ W
1 W K/
= 0 .1 K/ W R De lta
60
Conduction Angle
40 20
VSK.41.. Series 5 K/ W Per Mod ule TJ = 125C 0 20 40 60 80 100 0
0 20 40 60 80 100 120 140
T otal RMSOutp ut Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 7 - On-State Power Loss Characteristics
350
R t hS
2 0.
Maximum T otal Power Loss (W)
300
0. 3
W K/ K/ W
A
.1 =0
250 200 150 100 50 0 0 20
W K/
180 (S ine) 180 (Rec t)
ta el -D
0. 5
0. 7
K/ W
R
2 x VSK.41.. S eries S ingle Phase Bridge Connected TJ = 125C 40 60 80
K/ W 1K /W
1.5 K/
W
0 100
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 8 - On-State Power Loss Characteristics
500
A S R th
450
Maximum T otal Power Loss (W)
400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 0 3 x VSK.41.. S eries T hree P hase Bridge Connected TJ = 125C 120 (Rect)
= /W 1K 0.
0. 3
0.5 K/ W 0.7 K/ W 1 K/ W
2 0.
K/ W
W K/
ta el -D R
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94419 Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
Maximum Average On-state Power Loss (W)
120 100 80 60 40 20 0 0 20 40 60 80 100 Average On-state Current (A) DC 180 120 90 60 30
Maximum Allowable Case T emperature (C)
130 120 110
Conduction Angle
VSK.56.. S eries RthJC (DC) = 0.40 K/ W
100 90 30 80 70 0 10 20 30 40 50 60 70 Average On-state Current (A) 60 90 120
RMSLimit
Conduction Period
180
VSK.56.. S eries Per Junction TJ = 125C
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
Maximum Allow able Case T emperature (C)
120 110
VSK.56.. Series R thJC (DC) = 0.40 K/W
Peak Half S Wave On-state Current (A) ine
130
1200 1100 1000 900 800 700 600 500 1
At Any Ra ted Loa d Condition And With Ra ted VRRM Ap plied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Conduction Period
100 90 80 30 70 0 20 40 60 80 100 Average On-state Current (A) 60 90 120 180 DC
VSK.56.. S eries Per Junction 10 100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Los (W) s
Peak Half S ine Wave On-s tate Current (A)
90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 Average On-state Current (A)
Cond uction Angle
180 120 90 60 30 R Limit MS
1400
1200
1000
Ma ximum Non Repetitive S urge Current Versus Pulse T in Duration. Control ra Of Cond uc tion May Not B Maintained. e Initial TJ= 125C No Volta ge Rea pp lie d Ra ted VRRM Rea pp lie d
800
VSK.56.. S eries Per Junction TJ = 125C
600 VSK.56.. S eries Per Junction 400 0.01 0.1 Pulse T rain Duration (s) 1
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
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Document Number: 94419 Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 45/60 A
200 Maximum T otal On-s tate Power Loss (W)
R th
3 0.
2 0.
180 160 140 120 100 80
Conduction Angle
180 120 90 60 30
W K/
W K/
0. 7
1K /W
60 40 20 0 0 20 40 60 80 100 120 VSK.56.. Series Per Mod ule TJ = 125C
1.5 K/ W 2 K/ W
4 K/ W
0 140
T otal RMSOutput Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 16 - On-State Power Loss Characteristics
4 0. WW K/ K/ 5 0.
SA
.1 =0 W K/ elt -D
K/ W
aR
20
40
60
80
100
120
140
450 Maximum T otal Power Loss (W) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) 2 x VSK.56.. S eries S ingle Phas Bridge e Connec ted TJ = 125C
180 (S ine) 180 (Rec t)
0. 2 K/ W
R th
A S
= 1 0. W K/ elt -D
0. 3K /W
0.5 K/ W 0.7 K/ W 1K /W
2 K/ W
Fig. 17 - On-State Power Loss Characteristics
a R
600
R th
Maximum T otal Power Loss (W)
500 400 300 200 100 0 0 20 40 60 0 80 100 120 140 160 180 120 (R ect)
0. 2
A S
= 1 0. W K/
K/ W
ta el -D
0.3
R
K/ W
3 x VSK.56.. S eries T hree Phase Bridge Connec ted TJ = 125C
0.5 K/ W 0.7 K/ W
1 K/ W
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94419 Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
Maximum Reverse R ecovery Charge - Qrr (C) 500 VSK.41.. S eries eries 450 VSK.56.. S TJ = 125 C 400 350 300 250 200
10 A 20 A I T = 200 A M 100 A
1000 Instantaneous On-state Current (A)
100
50 A
TJ= 25C 10 TJ= 125C VSK.41.. S eries Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V)
150 100 10
20
30
40
50
60
70
80
90 100
R ate Of F Of On-state Current - di/ dt (A/ s) all
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Recovery Charge Characteristics
1000 Instantaneous On-s tate Current (A)
Maximum R everse Recovery Current - Irr (A)
110 100
I T = 200 A M 100 A
90 80 70 60 50 40 30 10
50 A 20 A 10 A
100
T = 25C J 10 T = 125C J VSK.56.. S eries Per Junction 1 0.5
VSK.41.. S eries VSK.56.. S eries TJ = 125 C 20 30 40 50 60 70 80 90 100
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Rate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Recovery Current Characteristics
T ns ra ient T hermal Impedanc e Z thJC (K/W)
1 S teady S tate Value: R thJC = 0.46 K/ W R thJC = 0.40 K/ W (DC Operation) 0.1 VSK.41.. S eries VSK.56.. S eries
Per Junction
0.01 0.001
0.01
0.1 S quare Wave Puls Duration (s) e
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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Document Number: 94419 Revision: 23-Apr-08
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM Generation 5 Power Modules), (ADD-A-PAK 45/60 A
100 Instantaneous Gate Voltage (V)
Rec tangular gate pulse a)R ecommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms 10 tr = 1 s tp >= 6 s ,
(1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms
(a)
(b)
T = -40 C J T = 25 C J T = 125 C J
1
(4) (3)
(2) (1)
VGD IGD 0.1 0.001 0.01 VSK.41../ .56.. S eries Frequenc y Limited by PG(AV) 0.1 1 10 100 1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 6
(1)
T
2 -
56
3
/
16
4
S90
5
P
6
Module type Circuit configuration (see end of datasheet) Current code (1) Voltage code (see Voltage Ratings table) dV/dt code: S90 = dV/dt 1000 V/s No letter = dV/dt 500 V/s P = Lead (Pb)-free
Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 41 to 42 56 to 57 e.g.: VSKT57/16P etc.
Note * To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94419 Revision: 23-Apr-08
For technical questions, contact: ind-modules@vishay.com
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VSK.41, .56..PbF Series
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKT (1) ~ VSKH (1) ~ VSKL (1) ~ VSKN (1) -
Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A
1
1
1
1
2
+ (2)
2
+ (2)
2
+ (2)
2
+ (2)
3
45 76 45
3
3
76 45
3
(3) G1 K1 K2 G2 (4) (5) (7) (6)
(3) G1 K1 (4) (5)
(3) K2 G2 (7) (6)
+ (3) G1 K1 (4) (5)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95085
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Document Number: 94419 Revision: 23-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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