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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX16 DESCRIPTION *Contunuous Collector Current-IC= -3A *Collector Power Dissipation: PC= 25W @TC= 25 Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) APPLICATIONS *Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage VALUE -160 UNIT V Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak w w scs .i w -150 -140 -7 -3 -4 -2 25 200 -65~200 .cn mi e V V V A A A Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CER V(BR)CEX VCE(sat) VBE(on) ICEX IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= -100mA; IB= 0 IC= -100mA; RBE= 100 IC= -100mA; VBE= 1.5V IC= -0.5A; IB= -50mA B BDX16 MIN -140 -150 -160 TYP. MAX UNIT V V V -1.0 -1.7 -1.0 -5.0 -1.0 80 4 V V mA mA IC= -0.5A; VCE= -4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE= 1.5V,TC=150 Current Gain-Bandwidth Product w ww scs .i VEB= -7V; IC= 0 IC= -0.5A; VCE= -4V IC= -0.2A; VCE= -10V .cn mi e 20 MHz isc Websitewww.iscsemi.cn 2 |
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