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PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1000E4C-66R IC............................................................... 1000 A VCES ....................................................... 3300V 1-element in a Pack (for brake chopper) Insulated Type LPT-IGBT / Soft Recovery Diode AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 29.5 0.5 57 0.25 190 0.5 57 0.25 57 0.25 6-M8 NUTS 15 0.3 6 4 2 140 0.5 124 0.25 20 -0.2 40 0.3 +0.1 40 0.3 9 0.2 5.2 0.3 28 0.5 5 0.2 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 38 +1 0 LABEL 6 (C) C 4 (C) 2 (A) 5 >PET+PBT< 3 1 E C >PET+PBT< G G E 5 (E) 20.25 0.3 8-7 MOUNTING HOLES 3 (E) 1 (K) 3-M4 NUTS CIRCUIT DIAGRAM 41.25 0.3 79.4 0.3 61.5 0.3 13 0.3 61.5 0.3 SCREWING DEPTH MIN 7.7 SCREWING DEPTH MIN 16.5 Mar. 2009 1 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Conditions VGE = 0V, Tj = -40...+150C Collector-emitter voltage VGE = 0V, Tj = -50C Gate-emitter voltage VCE = 0V, Tj = 25C DC, Tc = 95C Collector current (Note 1) Pulse DC Emitter current (Note 2) (Note 1) Pulse Maximum power dissipation(Note 3) Tc = 25C, IGBT part Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD 10 pC Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC =2500V, VCE VCES, VGE =15V, Tj =150C Ratings 3300 3200 20 1000 3000 1000 3000 10400 6000 2600 -50 ~ +150 -50 ~ +150 -55 ~ +150 10 Unit V V A A A A W V V C C C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25C Tj = 125C Tj = 150C Min -- -- -- 5.7 -0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 4.0 24.0 6.2 -- 140.0 8.7 4.0 10.7 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 1.65 1.95 2.10 1.80 2.20 2.40 2.70 2.80 2.85 0.30 0.35 0.40 1.35 1.65 1.70 1.50 1.80 1.90 2.15 2.30 2.25 Max 4.0 -- -- 6.7 0.5 -- -- -- -- -- 3.70 -- -- 1.25 1.25 -- 0.50 0.50 -- -- -- -- -- -- -- 3.30 3.30 -- 1.00 1.00 -- -- -- -- -- -- -- 2.80 -- Unit ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage VCE = VCES, VGE = 0V VCE = 10 V, IC = 100 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25C VCC = 1800 V, IC = 1000 A, VGE = 15 V IC = 1000 A VGE = 15 V mA V A nF nF nF C V td(on) Turn-on delay time VCC = 1800 V IC = 1000 A VGE = 15 V RG(on) = 2.4 Ls = 150 nH Inductive load tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time VCC = 1800 V IC = 1000 A VGE = 15 V RG(off) = 8.4 Ls = 150 nH Inductive load tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) VEC Emitter-collector voltage (Note 2) IE = 1000 A VGE = 0 V Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C (Note 4) Tj = 125C Tj = 150C (Note 4) s s J/P J/P s s J/P J/P V HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 2 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Reverse recovery time (Note 2) Conditions Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C trr Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Erec(10%) Reverse recovery energy (Note 2)(Note 5) VCC = 1800 V IC = 1000 A VGE = 15 V RG(on) = 2.4 Ls = 150 nH Inductive load Erec Reverse recovery energy (Note 2)(Note 6) Min -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ 0.50 0.70 0.80 850 1000 1050 700 1150 1350 0.70 1.20 1.35 0.80 1.35 1.55 Max -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Unit s A C J/P J/P THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, grease = 1W/m*K ,D(c-f) = 100 m Min -- -- -- -- Limits Typ -- -- -- 7.0 Max 12.0 22.5 22.5 -- Unit K/kW K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' rg Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- -- -- -- Limits Typ -- -- -- 1.2 -- -- -- 22.0 33.0 0.24 0.36 2.25 Max 22.0 6.0 3.0 -- -- -- -- -- -- -- -- -- Unit N*m N*m N*m kg -- mm mm nH nH m m Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor Collector to Emitter Anode to Cathode Tc = 25C, Collector to Emitter Tc = 25C, Anode to Cathode Tc = 25C Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode clamp diode (Clamp-Di). 3. Junction temperature (Tj) should not exceed Tjmax rating (150C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. The integration range of Eon / Eoff / Erec according to IEC 60747. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 3 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2000 Tj = 150C VGE = 19V 1600 COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) 2000 VCE = VGE 1600 VGE = 15V VGE = 11V COLLECTOR CURRENT (A) 1200 VGE = 13V 1200 800 VGE = 9V 400 800 400 Tj = 25C Tj = 150C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2000 VGE = 15V FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2000 1600 COLLECTOR CURRENT (A) EMITTER CURRENT (A) 1600 1200 1200 800 800 400 Tj = 25C Tj = 125C Tj = 150C 0 0 1 2 3 4 5 400 Tj = 25C Tj = 125C Tj = 150C 0 0 1 2 3 4 5 COLLECTOR-EMITTER SATURATION VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 4 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1800V, IC = 1000A Tj = 25C 15 VGE = 0V, Tj = 25C f = 100kHz Cies GATE-EMITTER VOLTAGE (V) 10 CAPACITANCE (nF) 102 7 5 3 2 5 0 101 7 5 3 2 Coes Cres -5 -10 100 -1 10 23 5 7 100 23 5 7 101 23 5 7 102 -15 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (C) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 125C Inductive load 7 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 150C Inductive load Eon 6 6 Eon SWITCHING ENERGIES (J/P) 5 SWITCHING ENERGIES (J/P) 5 4 Eoff 3 4 Eoff 3 2 Erec 1 2 Erec 1 0 0 400 800 1200 1600 2000 0 0 400 800 1200 1600 2000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 5 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, IC = 1000A VGE = 15V, LS = 150nH 6 Tj = 125C, Inductive load SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 VCC = 1800V, IC = 1000A VGE = 15V, LS = 150nH 6 Tj = 150C, Inductive load 5 Eon 5 Eon 4 4 3 Eoff 2 Erec 3 Eoff 2 Erec 1 1 0 0 5 10 15 20 0 0 5 10 15 20 GATE RESISTOR () GATE RESISTOR () HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 125C Inductive load SWITCHING TIMES (s) VCC = 1800V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 LS = 150nH, Tj = 150C Inductive load 101 SWITCHING TIMES (s) 7 5 3 2 101 7 5 3 2 td(off) td(on) tf td(off) td(on) tr 100 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-1 tr 7 5 3 2 2 3 45 7 103 2 3 45 7 104 tf 10-2 2 10 10-2 2 10 2 3 45 7 103 2 3 45 7 104 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 6 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102 7 5 104 VCC = 1800V, VGE = 15V RG(on) = 2.4, LS = 150nH Tj = 150C, Inductive load 7 5 3 2 REVERSE RECOVERY TIME (s) 2 2 REVERSE RECOVERY TIME (s) 3 3 REVERSE RECOVERY CURRENT (A) 3 2 101 7 5 3 2 lrr 103 7 5 3 2 101 7 5 3 2 lrr 103 7 5 3 2 100 7 5 3 2 trr 102 7 5 3 2 100 7 5 3 2 trr 102 7 5 3 2 10-1 2 10 2 3 45 7 103 2 3 45 101 7 104 10-1 2 10 2 3 45 7 103 2 3 45 7 104 101 EMITTER CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Rth(j-c)Q = 12.0K/kW Rth(j-c)R = 22.5K/kW 1.0 0.8 Z th( j -c ) ( t ) = Ri [K/kW] : i [sec] : R 1-exp i i=I n - t ti 0.6 1 0.0096 0.0001 2 0.1893 0.0058 3 0.4044 0.0602 4 0.3967 0.3512 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 7 REVERSE RECOVERY CURRENT (A) VCC = 1800V, VGE = 15V RG(on) = 2.4, LS = 150nH Tj = 125C, Inductive load 7 5 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules REVERSE BIAS SAFE OPERATING AREA (RBSOA) 4000 VCC 2500V, VGE = 15V Tj = 150C, RG(off) = 8.4 16 SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) VCC 2500V, VGE = 15V RG(on) = 2.4, RG(off) = 8.4 Tj = 150C COLLECTOR CURRENT (A) 3000 COLLECTOR CURRENT (kA) 12 2000 8 1000 4 0 0 1000 2000 3000 4000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 4000 VCC 2500V, di/dt < 6kA/s Tj = 150C REVERSE RECOVERY CURRENT (A) 3000 2000 1000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) Mar. 2009 8 |
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