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| MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE CM75TU-34KA IC ..................................................................... 75A VCES.......................................................... 1700V Insulated Type 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 3.75 80 0.25 102 48.5 17 3.75 107 90 0.25 23 12 12 4-5.5 MOUNTING HOLES (4) U V W 12 5-M5NUTS Tc measured point 2.8 7.1 11 23 21.7 12 23 11 12 0.5 0.8 11 4 8.1 P GUP EUP U GUN EUN N 29 -0.5 +1 21.7 Tc measured point LABEL 26 GVP EVP V GVN EVN GWP EWP W GWN EWN CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1700 20 75 150 75 150 660 -40 ~ +150 -40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A W C C Vrms N*m N*m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V VCC = 1000V, IC = 75A VGE = 15V RG = 4.2, Inductive load IE = 75A IE = 75A, VGE = 0V, Tj = 25C IE = 75A, VGE = 0V, Tj = 125C IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 5.5 -- 3.2 3.8 -- -- -- 340 -- -- -- -- -- 5.3 -- 2.2 -- -- 0.09 -- Max. 1 7 0.5 4.0 -- 10.5 1.8 0.55 -- 100 100 400 800 200 -- 4.6 -- 0.19 0.35 -- 0.13*3 Unit mA V A V nF nC ns ns C V V K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 150 Tj = 25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 11 COLLECTOR CURRENT (A) 12 150 125 100 75 50 25 0 VCE = 10V Tj = 25C Tj = 125C 125 100 75 VGE = 20V 15 14 10 9 50 25 0 8 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C 6 VGE = 15V Tj = 25C 5 Tj = 125C 4 3 2 1 0 8 6 IC = 150A 4 IC = 75A IC = 30A 2 0 20 40 60 80 100 120 140 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25C 101 7 5 3 2 Cies 102 7 5 3 2 100 7 5 3 2 Coes VGE = 0V Cres 101 1 2 3 4 5 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 7 5 3 2 SWITCHING TIMES (ns) tf td(off) 103 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V VGE = 15V 3 RG = 4.2 2 Tj = 25C Inductive load 102 7 5 3 2 102 7 5 Conditions: 3 2 VCC = 1000V 7 5 3 2 td(on) Irr trr 101 VGE = 15V RG = 4.2 Tj = 125C Inductive load 2 3 tr 2 3 5 7 102 100 0 10 5 7 101 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.19K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.35K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 75A 16 VCC = 800V VCC = 1000V 12 10-1 10-1 7 5 3 2 7 5 3 2 8 10-2 Single Pulse TC = 25C 10-2 4 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 0 0 100 200 300 400 500 GATE CHARGE QG (nC) Feb. 2009 4 |
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