View FDD6780A_4473800.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
January 2009
FDD6780A / FDU6780A_F071
N-Channel PowerTrench(R) MOSFET
25 V, 8.6 m Features
Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 25 20 30 48 16.4 100 24 32.6 3.7 -55 to +175 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case TO-252, TO-251 Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 4.6 40 C/W
Package Marking and Ordering Information
Device Marking FDD6780A FDU6780A Device FDD6780A FDU6780A_F071 Package D-PAK (TO-252) TO-251AA Reel Size 13 '' N/A(Tube) Tape Width 12 mm N/A Quantity 2500 units 75 units
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
1
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V 25 14 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 16.4 A VGS = 10 V, ID = 16.4 A Short-Lead I-PAK version rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 12.2 A VGS = 4.5 V, ID = 12.2 A Short-Lead I-PAK version VGS = 10 V, ID = 16.4 A, TJ = 150 C gFS Forward Transconductance VDS = 5 V, ID = 16.4 A 1.0 1.9 -5 6.8 7.0 14.1 14.3 10.3 70 8.6 8.8 19.0 19.2 13.0 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz f = 1MHz 927 197 181 1.2 1235 265 275 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 16.4 A VDD = 13 V, ID = 16.4 A, VGS = 10 V, RGEN = 6 7 3 16 3 17 9.2 2.8 4.0 14 10 29 10 24 13 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 16.4 A (Note 2) (Note 2) 0.8 0.9 15 4 1.2 1.3 27 10 V ns nC
IF = 16.4 A, di/dt = 100 A/s
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
2
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a) 40 C/W when mounted on a 1 in2 pad of 2 oz copper
b) 96 C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: EAS of 24 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A.
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
3
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
100
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V
6 5
VGS = 4 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
80
ID, DRAIN CURRENT (A) VGS = 8 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 6 V
4
VGS = 4.5 V
60 40
VGS = 4.5 V
3 2 1
VGS = 10 V VGS = 8 V VGS = 6 V
20
VGS = 4 V
0 0
0 0 20 40 60 80 100
ID, DRAIN CURRENT (A)
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
25
SOURCE ON-RESISTANCE (m)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8
ID = 16.4 A VGS = 10 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
20
ID = 16.4 A
rDS(on), DRAIN TO
15
TJ = 150 oC
10
TJ = 25 oC
0.6 -75 -50 -25
0
25
50
75 100 125 150 175
o
5 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. Normalized On- Resistance vs Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
VGS = 0 V
80
ID, DRAIN CURRENT (A) VDS = 3 V
10
TJ = 175 oC
60 40
TJ = 175 oC TJ = 25 oC
1
TJ = 25 oC TJ = -55 oC
20
TJ = -55 oC
0 0
1
2
3
4
5
6
7
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
4
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 16.4 A
3000
8
CAPACITANCE (pF)
VDD = 10 V
Ciss
6 4 2 0 0 3 6 9 12
VDD = 13 V
1000
VDD = 16 V
Coss
f = 1 MHz VGS = 0 V
Crss
15
18
100 0.1
1
10
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
60
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
30
TJ = 125 oC
45
VGS = 10 V
10
TJ = 25 oC TJ = 150 oC
30
Limited by Package
15
VGS = 4.5 V RJC = 4.6 C/W
o
1 0.001
0.01
0.1
1
10
100
0 25
50
75
100
125
o
150
175
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
200 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000
10 us
P(PK), PEAK TRANSIENT POWER (W)
1000
VGS = 10 V
SINGLE PULSE RJC = 4.6 oC/W TC = 25 oC
10
THIS AREA IS LIMITED BY rDS(on)
100 us
100
1 ms
1
SINGLE PULSE TJ = MAX RATED RJC = 4.6 oC/W TC = 25 oC
10 ms 100 ms DC
0.1 0.1
1
10
70
10 -5 10
10
-4
10
-3
10
-2
10
-1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
5
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE RJC = 4.6 C/W
o
0.01 -5 10
10
-4
10
-3
10
-2
10
-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2
0.01 0.003 -4 10
SINGLE PULSE RJA = 96 C/W (Note 1b)
-3 -2 -1 0
o
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
1
10
10
10
10
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
6
www.fairchildsemi.com
FDD6780A / FDU6780A_F071 N-Channel Power Trench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
tm
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM
FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM
tm
PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM XSTM (R) The Power Franchise(R)
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I37
(c)2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDD6780A

	To Download FDD6780A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .