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APTGT75TL60T3G
Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 75A @ Tc = 80C
Application * Solar converter * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring
28 27 26 25 29 30 23 22 20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ...
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 100 75 140 20 250 150A @ 550V Unit V
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A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT75TL60T3G
All ratings @ Tj = 25C unless otherwise specified Q1 to Q4 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C RG = 4.7 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 4620 300 140 0.8 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 380 0.60 ns Max Unit pF C
ns
mJ mJ A
C/W
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APTGT75TL60T3G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 50A VR = 300V IF = 50A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 350 50 1.6 1.5 100 150 2.6 5.4 0.60 1.20 1.42 2 Unit V A A V ns C mJ C/W
di/dt =1800A/s
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Err RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance
VR=600V
IF = 75A VGE = 0V
75 1.6 1.5 100 150 3.6 7.6 0.85 1.8
2 V ns C mJ 0.98 C/W
di/dt =2000A/s
IF = 75A VR = 300V
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
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APTGT75TL60T3G
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 175 125 100 4.7 110
Unit V C N.m g
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q1 to Q4 Typical performance curve
Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 75 60 45 30 15 0 0 20 40 IC (A) 60 80 100
Hard switching VCE=300V D=50% R G=4.7 T J=1 50C T c =85C
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28
APTGT75TL60T3G
Output Characteristics (VGE=15V) Output Characteristics 150
TJ = 150C VGE=19V
150
TJ=25C
125
IC (A)
125
TJ=150C
100 75 50 25 0 0 0.5 1
TJ=25C
100 IC (A) 75 50
VGE=13V VGE=15V
VGE=9V
25 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
150 125 100 75 50 25
Transfert Characteristics 5
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 4.7 TJ = 150C Eoff
4 E (mJ) 3 2
IC (A)
TJ=150C
Eon
1
TJ=25C
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 5
Eoff
0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150 100 125 150
4 E (mJ) IC (A)
VCE = 300V VGE =15V IC = 75A TJ = 150C
3 2 1 0 0 5
Eon
125 100 75 50 25 0 40 0
VGE=15V TJ=150C RG=4.7
10 15 20 25 30 Gate Resistance (ohms)
35
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5
0.1
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
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APTGT75TL60T3G
CR1 to CR4 Typical performance curve
Forward Characteristic of diode 100 80 60 40
TJ=150C
IF (A)
20
TJ=25C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
Switching Energy Losses vs Gate Resistance 1.2 1 E (mJ) E (mJ) 0.8 0.6 0.4 0.2 0 5 15 25 35 45 55 65 Gate Resistance (ohms)
VCE = 300V VGE =15V IC = 50A TJ = 150C
Energy losses vs Collector Current 1.5
1
0.5
VCE = 300V VGE = 15V RG = 8.2 TJ = 150C
0 0 20 40 IF (A) 60 80 100
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
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0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTGT75TL60T3G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25
TJ=25C TJ=150C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
Switching Energy Losses vs Gate Resistance 2 1.5 E (mJ) 1 0.5 0 0 5 10 15 20 25 30 35
VCE = 300V IC = 75A TJ = 150C
Energy losses vs Collector Current 3
VCE = 300V RG = 4.7 TJ = 150C
2 E (mJ) 1 0 0 25 50 75 IF (A) 100 125 150
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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