View APT28GA60BD15_4501602.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT28GA60BD15 APT28GA60SD15
600V High Speed PT IGBT
(R)
(B)
D3PAK
TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C E delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
C E
(S)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 50 28 84 30 222 84A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 16A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6335 Rev D 7 - 2009
VGS = 30V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 16A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +125C 84
APT28GA60BD_SD15
Min Typ
2109 214 26 90 14 28 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A 11 8 101 27 239 170 11 10 132 114 412 335 ns ns
J
J
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
.56 1.35
Unit
C/W g in*lbf
-
5.9
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6335 Rev D 7 - 2009
Typical Performance Curves
250
V
GE
APT28GA60BD_SD15
250 TJ= 150C IC, COLLECTOR CURRENT (A) 200 TJ= 125C 15V 13V 12V 11V 10V 9V 50 8V 6V
= 15V
IC, COLLECTOR CURRENT (A)
200
TJ= 55C TJ= 25C
150
150
100
100
50
0
0 5 10 15 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 16A C T = 25C
J
280 240 200 160 120 80
15 VCE = 120V 10 VCE = 300V
IC, COLLECTOR CURRENT (A)
5
VCE = 480V
TJ= 25C 40 TJ= 125C 0 0
TJ= -55C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
4 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
2
0
0
20
40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge
100
5
3
4
IC = 400A IC = 200A
3
IC = 32A IC = 16A
2 IC = 100A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 8A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60 50 40 30 20 10 0 052-6335 Rev D 7 - 2009
0
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
50
Typical Performance Curves
16 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 14 13 12 11 10 9 0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 30 25 tr, RISE TIME (ns) 20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 400V VCE = 400V TJ = 25C, or 125C RG = 10 L = 100H
APT28GA60BD_SD15
200
160
120
VGE =15V,TJ=125C
VGE = 15V
80
VGE =15V,TJ=25C
40
VCE = 400V RG = 10 L = 100H
8
0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25 0
RG = 10, L = 100H, VCE = 400V
0
TJ = 125C, VGE = 15V
tr, FALL TIME (ns)
TJ = 25C, VGE = 15V
0
5
10
15
20
25
30
35
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1000 Eon2, TURN ON ENERGY LOSS (J) 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 1500 SWITCHING ENERGY LOSSES (J) 1250 1000
Eoff,32A
V = 400V CE V = +15V GE T = 125C
J
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =10
G
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 1000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 10
G
V = 400V CE V = +15V GE R = 10
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
0
0
Eon2,32A
Eon2,32A
800
Eoff,32A
600
Eon2,16A
750 500 250
Eoff,8A Eon2,16A Eoff,16A Eon2,8A
052-6335 Rev D 7 - 2009
400
Eoff,16A
200
Eon2,8A Eoff,8A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10000 Cies C, CAPACITANCE (pF) 1000 200 100 IC, COLLECTOR CURRENT (A)
APT28GA60BD_SD15
10
100
Coes
1
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
Cres
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.6 ZJC, THERMAL IMPEDANCE (C/W) 0.5 0.4 0.3 0.2 0.1 0 10
-5
D = 0.9
0.7
0.5
Note:
0.3
PDM
t1 t2
0.1 0.05 10
-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
052-6335 Rev D 7 - 2009
APT28GA60BD_SD15
10% Gate Voltage td(on)
90% TJ = 125C Collector Current tr
APT30DQ120
V CC
IC
V CE
5%
10%
5% Collector Voltage
Switching Energy
A D.U.T.
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90% 90% td(off) TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
052-6335 Rev D 7 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 129C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT28GA60BD_SD15
600 30 110 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C
Min
Type
2.0 2.5 1.56
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.5 0.60
PDM
t1 t2
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 15 19 21 2 105 250 5 55 420 15
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
Note:
0.40 0.20 0 10-5
0.3
0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6335 Rev D 7 - 2009
Dynamic Characteristics
60
TJ = 25C unless otherwise specified
140
APT28GA60BD_SD15
T =125C J V =400V
trr, REVERSE RECOVERY TIME (ns)
50 IF, FORWARD CURRENT (A) TJ = 175C 40 TJ = 125C
120 30A 100 80 60 40 20 0 15A
R
30
7.5A
20
10 0
TJ = 25C TJ = -55C 0
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
T =125C J V =400V
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0 7.5A
R
30A
20 30A 15
15A
10 7.5A
15A
5
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25
Duty cycle = 0.5 T =175C
J
0
1.0
0.8 IRRM 0.6 trr 0.4 10 0.2 0.0 Qrr 5 0 IF(AV) (A) 20 15
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 90 CJ, JUNCTION CAPACITANCE (pF) 80 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6335 Rev D 7 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT28GA60BD_SD15
+18V 0V
diF /dt Adjust
APT6017LLL
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6335 Rev D 7 - 2009
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated

▲Up To Search▲

Price & Availability of APT28GA60BD15

	To Download APT28GA60BD15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .