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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1555 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) *High DC Current Gain: hFE= 5000(Min)@IC= -6A *Complement to Type 2SD2384 APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -140 V -140 V -5 V -7 A -0.1 A 100 W .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1555 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA B -2.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -3.0 V ICBO Collector Cutoff Current VCB= -140V ; IE=0 -5 A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 A hFE-1 DC Current Gain IC= -6A ; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications A 5000-12000 w w B scs .i w C IC= -10A ; VCE= -5V IE=0 ; VCB= -10V;ftest= 1.0MHz .cn mi e 5000 2000 30000 120 pF IC=-1A ; VCE= -5V 30 MHz 9000-18000 15000-30000 isc Websitewww.iscsemi.cn 2 |
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