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TO-92 Plastic-Encapsulate Transistors TO-92 8050S FEATURES TRANSISTOR (NPN) Complimentary to 8550S Collector current: IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 5 0.5 0.625 150 -55-150 Units V V V A W 1.EMITTER 2.COLLECTOR 3.BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE= 1V, IC= 500mA 50 0.6 1.2 150 V V MHz IC=500mA, IB=50mA IC=500mA, IB=50mA VCE= 6V, IC=20mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 MIN 40 25 5 0.1 0.1 0.1 85 400 TYP MAX UNIT V V V A A A IC= 100A, IC= 0.1mA, IE= 100A, VCB= 40 V , VCE= 20 V , VEB= 5V, VCE= 1V, IC=0 IC= 50mA fT hFE(1) B 85-160 C f =30MHz CLASSIFICATION OF Rank Range D 160-300 D3 300-400 120-200 Typical Characteristics 8050S |
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