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FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT FEATURES: * * * * * * 22 dBm Output Power (P1dB) 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz Useable Gain to 18 GHz Datasheet v3.0 PACKAGE: GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. TYPICAL APPLICATIONS: * * * * Gain blocks and medium power stages WiMax (2-11GHz) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18GHz) ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1dB Gain Compression Small Signal Gain Power-Added Efficiency SYMBOL P1dB SSG PAE CONDITIONS VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA POUT = P1dB MIN TYP 22 MAX UNITS dBm dB % 14 16 45 Maximum Stable Gain (S21/S12) f = 12 GHz f = 18 GHz Noise Figure Output Third-Order Intercept Point MSG VDS = 5 V; IDS = 55mA 15 12 NF IP3 VDS = 5 V; IDS = 55mA, VDS = 5V; IDS = 55mA POUT = 10 dBm SCL 0.8 32 dB dBm Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| RJC VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.2 mA IGS = 0.36mA IGD = 0.36 mA 90 105 215 140 1 135 mA mA mS 10 1.3 A V V V C/W 0.7 12 14.5 1.0 14 16 275 Note: TAMBIENT = 22C; RF specification measured at f = 5.8 GHz using CW signal (except as noted) 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 ABSOLUTE MAXIMUM RATING : PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation 3 Simultaneous Combination of Limits 2 or more Max. Limits 80% PIN TCH TSTG PTOT Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below 16dBm 175C -40C to 150C 550mW 1 SYMBOL VDS VGS IDS IG TEST CONDITIONS -3V < VGS < +0V 0V < VDS < +8V For VDS < 2V Forward or reverse current ABSOLUTE MAXIMUM 8V -3V IDSS 10mA Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 550mW - (1/ RJC) x TPACK where TPACK= source tab lead temperature above 22C Example: For a 65C carrier temperature: PTOT = 550mW - (3.6 x (65 - 22)) = 323mW BIASING GUIDELINES: * Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD6836P70. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% IDSS offers an optimised solution for NF and OIP3. * * 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 TYPICAL FREQUENCY RESPONSE FPD6836P70 Biased @ VD = 5V ID = 55mA 30 MSG FPD6836P70 Bias VD = 5V, ID = 50mA 5 4.5 4 3.5 3 Noise Figure 25 S21 MSG & 20 15 10 5 0 1 2 34 5 6 78 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) Mag S21 2.5 2 1.5 1 0.5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) NOTE: Tuned Noise figure variation against frequency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50mA. The test devices were tuned for minimum noise figure using tuners at the device input and output ports. TYPICAL RF PERFORMANCE Power Transfer Characteristics VDS = 5V, IDS = 55mA at f = 5.8GHz 70.0% 4.00 23.0 3.50 Pout (dBm) Comp Point Drain Efficiency and PAE 70.0% 60.0% PAE Eff. 60.0% 21.0 3.00 Gain Compression (dB) Output Power (dBm) 19.0 17.0 15.0 2.50 2.00 1.50 1.00 PAE (%) 40.0% 40.0% 30.0% 30.0% 13.0 0.50 11.0 9.0 -3 -1 1 3 5 7 9 11 13 0.00 -0.50 20.0% 20.0% 10.0% 10.0% 0.0% -3 -1 1 3 5 7 9 11 13 0.0% Input Power (dBm) Input Power (dBm) Typical Intermodulation Performance VDS = 5V, IDS = 55mA at f = 5.8GHz 12 Pout (dBm) -38.00 3rds (dBc) 10 Output Power (dBm) -43.00 8 -48.00 6 3rd Order IM Products (dBc) -53.00 4 2 -10.3 -9.3 -8.3 -7.4 -6.3 -5.3 -4.4 -3.4 -2.4 -58.00 Inpur Power (dBm) NOTE: Typical Power, Efficiency and Intermodulation is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz. The test devices were Tuned using slide tuners at the input and the output ports of the device. 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com Drain Efficiency (%) 50.0% 50.0% FPD6836P70 Datasheet v3.0 TEMPERATURE RESPONSE: FPD6836P70 Gain & Powe r Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz FPD6836P70 Inte rmodulation Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz 21.00 18.00 20.00 18.00 17.00 16.00 15.00 16.00 15.00 14.00 19.00 Intermodulation Products (dBc) 19.00 22.00 -30.00 IM3 -35.00 17.00 P1dB (dBm) SSG (dB) -40.00 -45.00 SSG 14.00 -40 -20 0 P1dB 20 40 60 80 13.00 12.00 -50.00 -40 -20 0 20 40 60 80 Temperature (C) Temperature (C) NOTE: Typical power, gain and Inter-modulation variation over temperature is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz on eval board. The eval board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical number due to the change in matching. NOISE PARAMETERS: Bias 5V, 50mA Freq (GHz) 0.90 1.80 2.40 2.60 2.80 3.20 4.00 5.00 5.50 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 Rn/50 0.165 0.176 0.158 0.159 0.160 0.156 0.141 0.120 0.114 0.107 0.096 0.100 0.121 0.138 0.187 0.239 0.355 0.461 0.604 Mag 0.747 0.623 0.795 0.640 0.670 0.617 0.542 0.465 0.431 0.366 0.262 0.188 0.135 0.162 0.183 0.270 0.343 0.431 0.573 Angle 15.70 24.95 37.45 47.15 47.90 51.20 68.70 85.00 91.10 101.15 122.10 153.60 -165.60 -126.80 -85.95 -68.40 -50.25 -43.95 -25.80 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 REFERENCE DESIGN 5.15 TO 5.85 GHZ: FREQUENCY Gain N.F. P1dB IP3 S11 S22 Vd Vg Id GHZ dB dB dBm dBm dB dB V V mA 5.5 20 FPD6836P70 5.5GHz Eval Board Biased @ 5V, 55mA DB(|S(2,1)|) 16 1.0 19.5 dB 15 10 5 0 DB(|S(1,1)|) DB(|S(2,2)|) 30 -6 -26 5 -0.4 to -0.6 55 -5 -10 -15 -20 -25 -30 2 3 4 5 6 Frequency (GHz) 7 8 9 SCHEMATIC MTEE ID=TL22 W1=150 mil W2=100 mil W3=220 mil 2 2 3 1 3 1 CAP ID=C2 C=33 pF MTEE ID=TL10 W1=45 mil W2=70 mil W3=45 mil 1 3 2 MLIN ID=TL2 W=70 mil L=420 mil MTEE ID=TL9 W1=70 mil W2=40 mil W3=40 mil 1 3 2 MLIN ID=TL3 W=40 mil L=100 mil MLIN ID=TL19 W=100 mil L=100 mil MLIN ID=TL17 W=150 mil L=120 mil MTEE ID=TL21 W1=150 mil W2=45 mil W3=45 mil 1 2 CAP ID=C4 C=33 pF PORT P=1 Z=50 Ohm RES ID=R1 R=20 Ohm MLIN ID=TL6 W=45 mil L=30 mil SUBCKT ID=Q1 NET="FET" MLEF ID=TL1 W=40 mil L=190 mil MLEF ID=TL11 W=220 mil L=380 mil MLIN ID=TL16 W=5 mil L=310 mil PORT P=3 Z=50 Ohm MRSTUB2 ID=TL20 Ri=20 mil Ro=268 mil Theta=90 Deg MLIN ID=TL14 W=50 mil L=100 mil MLIN ID=TL15 W=50 mil L=50 mil MLIN ID=TL5 W=5 mil L=280 mil MRST UB2 ID=TL8 Ri=20 mil Ro=350 mil Theta=90 Deg CAP ID=C1 C=33 pF CAP ID=C5 C=33 pF MLIN ID=TL4 W=50 mil L=100 mil DCVS ID=VG V=-0.5 V CAP ID=C7 C=1000000 pF DCVS ID=VD V=5 V 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 BOARD LAYOUT 33pF 20 Ohms Q1 Q1 33pF P1 33pF 33pF 0.01uF 0.01uF P2 1.0uF 1.0uF 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 S-PARAMETERS BIASED @ 5V, 55mA: FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 12.250 12.500 12.750 13.000 S11m 0.976 0.953 0.925 0.894 0.860 0.827 0.796 0.767 0.742 0.718 0.694 0.672 0.650 0.629 0.614 0.600 0.587 0.571 0.555 0.540 0.529 0.521 0.511 0.504 0.499 0.496 0.493 0.492 0.491 0.483 0.486 0.483 0.479 0.475 0.473 0.473 0.476 0.483 0.488 0.495 0.507 0.521 0.539 0.560 0.581 0.603 0.626 0.645 0.662 0.675 0.685 S11a -20.9 -31.4 -41.3 -51.2 -60.7 -69.7 -78.2 -86.3 -93.6 -100.5 -106.8 -112.6 -117.8 -122.6 -127.3 -132.1 -136.8 -142.0 -147.0 -152.4 -158.0 -163.8 -170.2 -176.6 177.0 170.4 163.9 157.5 151.2 145.5 140.4 135.3 130.8 126.5 122.5 118.4 114.1 109.1 103.4 97.7 91.7 85.7 79.8 74.3 69.2 64.8 60.8 57.1 53.7 50.5 47.6 S21m 11.395 11.087 10.729 10.279 9.807 9.315 8.842 8.385 7.951 7.554 7.180 6.833 6.521 6.232 6.002 5.788 5.605 5.418 5.249 5.096 4.967 4.850 4.729 4.606 4.498 4.377 4.261 4.135 4.007 3.876 3.784 3.679 3.588 3.509 3.448 3.415 3.397 3.376 3.339 3.312 3.279 3.229 3.166 3.091 3.021 2.945 2.877 2.804 2.738 2.666 2.604 S21a 161.5 153.2 145.1 137.3 130.0 123.1 116.7 110.6 104.9 99.5 94.5 89.6 85.1 80.9 76.7 72.7 68.5 64.2 60.3 56.3 52.3 48.1 43.7 39.5 35.3 31.0 26.8 22.5 18.4 14.8 11.2 7.5 4.1 0.9 -2.4 -5.6 -9.1 -13.2 -17.3 -21.4 -25.9 -30.4 -35.0 -39.4 -43.7 -47.8 -51.9 -56.0 -60.1 -64.2 -68.2 S12m 0.011 0.016 0.021 0.025 0.029 0.032 0.034 0.036 0.038 0.040 0.041 0.042 0.043 0.043 0.044 0.045 0.046 0.048 0.048 0.048 0.049 0.051 0.052 0.054 0.055 0.056 0.057 0.057 0.058 0.057 0.057 0.057 0.058 0.058 0.059 0.062 0.066 0.070 0.073 0.077 0.080 0.083 0.086 0.089 0.091 0.093 0.095 0.096 0.097 0.098 0.100 S12a 78.3 72.8 67.8 62.9 58.6 54.8 51.4 48.1 46.0 42.6 40.4 38.5 36.3 34.7 33.9 33.4 32.1 30.0 28.4 26.8 26.0 25.4 23.3 21.1 19.2 17.0 14.0 11.9 9.4 7.6 6.4 4.8 5.0 4.5 5.2 5.6 5.0 3.1 0.9 -1.5 -3.5 -6.7 -10.1 -12.3 -15.6 -18.5 -21.4 -24.2 -26.8 -29.7 -32.5 S22m 0.635 0.626 0.614 0.598 0.583 0.567 0.553 0.540 0.528 0.517 0.506 0.496 0.487 0.479 0.475 0.471 0.467 0.460 0.453 0.447 0.443 0.441 0.438 0.428 0.418 0.405 0.391 0.376 0.361 0.348 0.340 0.333 0.331 0.330 0.332 0.340 0.347 0.354 0.355 0.360 0.360 0.357 0.349 0.338 0.327 0.316 0.307 0.300 0.295 0.293 0.295 S22a -11.5 -17.0 -22.2 -26.9 -30.9 -34.6 -37.9 -40.8 -43.6 -46.2 -48.9 -51.2 -53.5 -55.5 -57.7 -59.5 -62.3 -64.6 -66.4 -68.2 -70.0 -72.6 -76.0 -78.8 -81.2 -84.3 -87.6 -90.7 -93.6 -96.1 -99.1 -101.7 -104.6 -107.2 -109.6 -112.7 -116.0 -120.7 -124.8 -129.3 -134.3 -139.9 -145.6 -151.3 -157.2 -163.3 -169.6 -176.1 177.6 171.3 165.3 7 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 S-PARAMETERS BIASED AT 5V, 55mA CONTINUED: FREQ[GHz] 13.250 13.500 13.750 14.000 14.250 14.500 14.750 15.000 15.250 15.500 15.750 16.000 16.250 16.500 16.750 17.000 17.250 17.500 17.750 18.000 18.250 18.500 18.750 19.000 19.250 19.500 19.750 20.000 20.250 20.500 20.750 21.000 21.250 21.500 21.750 22.000 22.250 22.500 22.750 23.000 23.250 23.500 23.750 24.000 24.250 24.500 24.750 25.000 25.250 25.500 25.750 26.000 S11m 0.693 0.701 0.711 0.724 0.738 0.755 0.771 0.787 0.800 0.808 0.813 0.818 0.822 0.822 0.824 0.831 0.839 0.845 0.852 0.852 0.848 0.841 0.829 0.815 0.805 0.796 0.786 0.780 0.778 0.776 0.777 0.779 0.782 0.784 0.785 0.786 0.783 0.777 0.772 0.774 0.771 0.755 0.750 0.744 0.741 0.732 0.718 0.704 0.688 0.677 0.673 0.677 S11a 44.9 42.1 39.3 36.2 32.8 29.1 25.2 20.9 17.0 13.2 9.2 5.2 1.3 -2.4 -5.9 -9.6 -12.5 -15.3 -17.6 -19.5 -20.5 -20.9 -20.6 -20.5 -20.7 -21.6 -23.6 -26.8 -30.7 -35.6 -41.3 -46.8 -52.0 -56.4 -59.8 -62.1 -63.5 -65.4 -67.7 -70.1 -73.2 -76.1 -79.2 -81.7 -84.1 -86.5 -89.2 -90.9 -95.1 -99.6 -105.6 -111.1 S21m 2.545 2.488 2.434 2.392 2.347 2.307 2.262 2.225 2.184 2.144 2.110 2.067 2.024 1.973 1.915 1.855 1.788 1.721 1.663 1.603 1.553 1.508 1.473 1.440 1.415 1.398 1.389 1.382 1.375 1.369 1.356 1.333 1.309 1.279 1.241 1.195 1.162 1.124 1.098 1.073 1.054 1.043 1.028 1.025 1.027 1.031 1.047 1.061 1.074 1.080 1.086 1.065 S21a -72.1 -76.1 -79.9 -83.8 -87.7 -91.8 -95.7 -99.7 -103.8 -107.9 -112.2 -116.6 -121.1 -125.6 -130.0 -134.4 -138.4 -142.1 -145.7 -148.6 -151.4 -154.2 -156.6 -159.3 -161.9 -164.8 -167.6 -171.2 -175.1 -179.4 175.9 171.2 166.1 161.1 156.3 152.0 147.9 144.2 140.5 137.2 133.8 130.5 127.1 123.5 120.0 116.1 112.0 107.3 102.3 97.0 90.9 85.8 S12m 0.101 0.102 0.103 0.106 0.107 0.107 0.109 0.109 0.110 0.112 0.112 0.112 0.113 0.112 0.111 0.108 0.108 0.106 0.105 0.103 0.102 0.102 0.100 0.102 0.102 0.102 0.104 0.106 0.107 0.109 0.109 0.109 0.110 0.108 0.109 0.110 0.108 0.108 0.108 0.108 0.109 0.112 0.110 0.112 0.116 0.120 0.127 0.132 0.135 0.143 0.146 0.148 S12a -35.0 -37.8 -40.4 -43.3 -46.7 -48.9 -51.8 -55.1 -58.6 -61.9 -65.3 -68.4 -71.6 -75.7 -78.8 -83.5 -86.4 -88.7 -92.6 -94.2 -96.3 -98.6 -100.6 -103.0 -105.7 -107.4 -110.4 -113.5 -118.2 -121.5 -126.2 -130.7 -135.0 -140.3 -144.2 -148.4 -152.0 -155.3 -159.3 -162.4 -164.5 -169.1 -171.7 -175.2 -178.7 178.5 174.2 170.0 165.2 159.3 154.0 147.8 S22m 0.299 0.302 0.308 0.312 0.314 0.317 0.318 0.320 0.323 0.326 0.334 0.340 0.348 0.357 0.366 0.373 0.379 0.387 0.396 0.406 0.418 0.429 0.437 0.449 0.456 0.456 0.460 0.460 0.455 0.452 0.444 0.438 0.432 0.424 0.421 0.417 0.420 0.426 0.428 0.428 0.436 0.434 0.443 0.433 0.429 0.418 0.407 0.396 0.372 0.349 0.327 0.298 S22a 159.0 153.3 147.9 142.7 138.2 133.8 129.6 125.4 120.5 115.7 110.0 103.9 97.3 90.3 82.9 76.1 69.3 63.5 58.6 54.7 51.6 48.5 46.0 43.1 40.7 39.3 38.7 37.9 36.9 35.7 34.4 31.4 26.9 20.6 13.6 6.0 -1.5 -7.9 -12.7 -16.5 -19.5 -22.0 -25.3 -29.0 -33.5 -36.8 -41.2 -46.5 -50.7 -57.2 -64.2 -71.0 8 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD6836P70 Datasheet v3.0 PACKAGE OUTLINE: (dimensions in millimeters - mm) PREFERRED ASSEMBLY INSTRUCTIONS: Available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. HANDLING PRECAUTIONS: ORDERING INFORMATION: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114-B (Human Body Model) and Class 0 (0250V) per JESD22-A115-A (Machine Model). Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. PART NUMBER FPD6836P70 DESCRIPTION Packaged pHEMT APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. 9 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
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