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PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Rev. 01 -- 1 October 2009 Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 10 kV I Femtofarad capacitance: Cd = 400 fF I IEC 61000-4-2; level 4 (ESD) I Low ESD clamping voltage: 30 V I AEC-Q101 qualified at 30 ns and 8 kV I Very low leakage current: IRM < 1 nA
1.3 Applications
I I I I 10/100/1000 Mbit/s Ethernet FireWire High-speed data lines Subscriber Identity Module (SIM) card protection I Cellular handsets and accessories I I I I Portable electronics Communication systems Computers and peripherals Audio and video equipment
I Antenna protection
1.4 Quick reference data
Table 1. Symbol Per device VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V 0.4 5.5 0.55 V pF Quick reference data Parameter Conditions Min Typ Max Unit
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode (diode 1) cathode (diode 2)
1 2 1
sym045
Simplified outline
Graphic symbol
2
Transparent top view
3. Ordering information
Table 3. Ordering information Package Name PESD5V0F1BL Description leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm Version SOD882 Type number
4. Marking
Table 4. Marking codes Marking code ZZ Type number PESD5V0F1BL
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device IPP Tj Tamb Tstg
[1]
Parameter peak pulse current junction temperature ambient temperature storage temperature
Conditions tp = 8/20 s
[1]
Min -40 -55
Max 2.5 85 +85 +125
Unit A C C C
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
2 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Per device VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[1]
Parameter
Conditions
Min -
Max 10 10
Unit kV kV
Table 7. Standard Per device
ESD standards compliance Conditions > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
3 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per device VRWM IRM VBR Cd VCL reverse standoff voltage reverse leakage current VRWM = 5 V breakdown voltage diode capacitance clamping voltage IPP = 1 A IPP = 2.5 A rdif
[1]
Conditions
Min 6 [1]
Typ 1 8 0.4 -
Max 5.5 100 10 0.55 11 15 30
Unit V nA V pF V V
IR = 1 mA f = 1 MHz; VR = 0 V
-
differential resistance
IR = 20 mA
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
0.5 Cd (pF) 0.4
006aab598
IPP
-VCL -VBR -VRWM
IR IRM -IRM -IR VRWM VBR VCL
0.3 -
+
0.2 -6.0
-2.0
2.0 VR (V)
6.0
-IPP
006aaa676
f = 1 MHz; Tamb = 25 C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
Fig 4.
V-I characteristics for a bidirectional ESD protection diode
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
4 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
ESD TESTER
RZ 450 RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
CZ
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
DUT (DEVICE UNDER TEST)
vertical scale = 2 kV/div horizontal scale = 15 ns/div
vertical scale = 50 V/div horizontal scale = 15 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div horizontal scale = 15 ns/div GND GND
vertical scale = 50 V/div horizontal scale = 15 ns/div
unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2
006aab599
Fig 5.
ESD clamping test setup and waveforms
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
5 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
7. Application information
PESD5V0F1BL is designed for the protection of one bidirectional data or signal line from the damage caused by ESD and surge pulses. The device may be used on lines where the signal polarities are both, positive and negative with respect to ground.
ANTENNA
GPS
PESD5V0F1BL
GND
006aab600
Fig 6.
Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
6 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
9. Package outline
0.62 0.55 2
0.50 0.46
0.30 0.22
0.65 0.30 0.22 0.55 0.47 Dimensions in mm
1.02 0.95
1
cathode marking on top side 03-04-17
Fig 7.
Package outline PESD5V0F1BL (SOD882)
10. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 2 mm pitch, 8 mm tape and reel Packing quantity 10000 PESD5V0F1BL SOD882
[1]
-315
For further information and the availability of packing methods, see Section 14.
11. Soldering
1.3 0.7 R0.05 (8x)
solder lands solder resist solder paste occupied area 0.3 (2x) 0.4 (2x)
sod882_fr
0.9
0.6 0.7 (2x) (2x)
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 8.
PESD5V0F1BL_1
Reflow soldering footprint PESD5V0F1BL (SOD882)
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
7 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
12. Revision history
Table 10. Revision history Release date 20091001 Data sheet status Product data sheet Change notice Supersedes Document ID PESD5V0F1BL_1
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
8 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0F1BL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 1 October 2009
9 of 10
NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 October 2009 Document identifier: PESD5V0F1BL_1

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