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| STGF8NC60KD N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESHTM IGBT Features Type STGF8NC60KD VCES 600V VCE(sat)Typ @25C 2.2V IC @100C 4A Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10s 3 1 2 TO-220FP Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drivers Figure 1. Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Table 1. Device summary Marking GF8NC60KD Package TO-220FP Packaging Tube Order code STGF8NC60KD September 2007 Rev 1 1/14 www.st.com 14 Contents STGF8NC60KD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGF8NC60KD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC(1) IC(1) ICP(2) VGE IF IFSM VISO PTOT Tj Tscw Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Pulsed collector current Gate-emitter voltage Diode RMS forward current at Tc=25C Surge not repetitive forward current tp = 10ms sinusoidal Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Total dissipation at TC = 25C Operating junction temperature Short circuit withstand time Value 600 7 4 30 20 7 20 2500 24 - 55 to 150 10 Unit V A A A V A A V W C s 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max IGBT Thermal resistance junction-case max diode Thermal resistance junction-ambient Max Value 5.1 7 62.5 Unit C/W C/W C/W 3/14 Electrical characteristics STGF8NC60KD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 2.2 1.8 4.5 2.75 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC=3A voltage VGE= 15V, IC= 3A, Tc= 125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= Max rating,TC= 25C VCE=Max rating,TC= 125C VGE= 20V, VCE= 0 VCE = 15V, IC= 3A 6.5 150 1 100 15 Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, VGE = 15V, (see Figure 18) Min. Typ. Max. 380 46 8.5 19 5 9 Unit pF pF pF nC nC nC 4/14 STGF8NC60KD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Test conditions VCC = 390V, IC = 3A , RG= 10 VGE= 15V, Tj= 25C (see Figure 19) VCC = 390V, IC =3A RG= 10 VGE= 15V, , Tj=125C (see Figure 19) Vcc = 390V, IC = 3A, RGE = 10 VGE =15V, , TJ=25C (see Figure 19) Vcc = 390V, IC = 3A, , RGE=10 VGE =15V, Tj=125C (see Figure 19) Min. Typ. 17 6 655 Max. Unit ns ns A/s Turn-on delay time Current rise time Turn-on current slope 16.5 6.5 575 ns ns A/s Off voltage rise time Turn-off delay time Current fall time 33 72 82 ns ns ns Off voltage rise time Turn-off delay time Current fall time 60 106 136 ns ns ns Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 3A , RG= 10 VGE=15V, Tj=25C (see Figure 19) VCC = 390V, IC = 3A , RG= 10 VGE= 15V, Tj= 125C (see Figure 19) Min. Typ. 55 85 140 87 162 249 Max. Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGF8NC60KD Table 8. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 3A If = 3A, Tj = 125C If = 3A,VR = 30V, Tj = 25C, di/dt = 100 A/s (see Figure 20) If = 3A,VR = 30V, Tj =125C, di/dt = 100A/s (see Figure 20) Min. Typ. 1.6 1.3 23.5 16.5 1.4 39 39 2 Max. 2.1 Unit V V ns nC A ns nC A 6/14 STGF8NC60KD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Figure 9. STGF8NC60KD Collector-emitter on voltage vs collector current Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGF8NC60KD Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Forward voltage drop versus forward current 9/14 Test circuit STGF8NC60KD 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveform Figure 20. Diode recovery time waveform 10/14 STGF8NC60KD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGF8NC60KD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/14 G STGF8NC60KD Revision history 5 Revision history Table 9. Date 20-Sep-2007 Document revision history Revision 1 First release Changes 13/14 STGF8NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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