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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 900 2SC4518 Collector-base voltage Open emitter 2SC4518A 1000 550 7 Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 5 10 2.5 35 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC=0 IC=1.8A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.35A ; VCE=12V 2SC4518 2SC4518A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT MIN 550 TYP. MAX UNIT V 0.5 1.2 100 100 10 50 6 25 |I |I V V A A pF MHz Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time IC=1.8A; IB1=0.27A IB2=-0.9A VCC=250V ,RL=139| Fall time 0.7 4.0 0.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4518 2SC4518A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A TOR NDU ICO E SEM ANG INCH 4 |
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