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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *DARLINGTON *10A rated continuous collector current APPLICATIONS *For use in automotive ignition,switching and motor control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP160/161/162 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP160 VCBO Collector-base voltage TIP161 TIP162 TIP160 VCEO Collector-emitter voltage TIP161 TIP162 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 320 350 380 320 350 380 5 10 15 1 125 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP160 V(BR)CEO Collector-emitter breakdown voltage TIP161 TIP162 VCE(sat)-1 VCE(sat)-2 VBE(sat) VF Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage TIP160 ICEO Collector cut-off current TIP161 TIP162 IEBO hFE Emitter cut-off current DC current gain IC=6.5A ,IB=0.1A IC=10A ,IB=1A IC=6.5A ,IB=0.1A IF=10A VCE=320V, IB=0 VCE=350V, IB=0 VCE=380V, IB=0 VEB=5V; IC=0 IC=4A ; VCE=2.2V IC=10mA, IB=0 CONDITIONS SYMBOL TIP160/161/162 MIN 320 350 380 TYP. MAX UNIT V 2.8 2.9 2.2 3.5 V V V V 1.0 mA 100 200 mA Switching times td tr ts tf Delay time Rise time Storage time Fall time VCC =33 V, IC = 6.5 A, IB1 =-IB2 =100 mA tp=20s ;Duty CycleA2.0% 0.3 1.5 2.3 2.8 s s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP160/161/162 Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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