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| 3PT068080JL 3PT068080JL PHOTO TRANSISTOR CHIPS DESCRIPTION O O O O O O O O 3PT068080JL is NPN phototransistor chips that fabricated in silicon epitaxial planar technology; The chips are widely used in photo-coupler for switching power suppliers; It has low dark current, high sensitivity, high responsible time etc; The top side electrode material is Al, and the backside electrode material is Au; Chip Size: 680mx450m; Chip Thickness: 22020m; Emitter PAD Size(E): 130mx105m; Base PAD Size(B): 40m x 40m (only for chip probing). E: Emitter B: Base Chip Topography ABOSULATE MAXIMUM RATINGS Parameters Maximum Operation Junction Temperature Storage Temperature Range Symbol TJ TSTG Ratings 125 -40~125 Unit C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Characteristics Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Collector Emitter Saturation Voltage Rise/ Fall Time Current Gain Collector-Base Capacitance Symbol BVCEO Test conditions IC=100A, IB=0A Min. 80 Max. Unit V BVECO IC=10A, IB=0A VCE=20V, H=0mW/cm2 VCE=80V, H=0mW/cm 2 7 50 150 0.2 2 10 700 7.4 V nA nA V V s ICEO VCE(SAT) Tr/Tf hFE CCB IC=2mA, IB=100A IC=20mA, IB=100A VCE=2V, IC=2mA, RL=100 VCE=5V, IC=2mA f=1MHz, VCB=3V pF HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.07.02 Page 1 of 1 |
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