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| v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Typical Applications The HMC330 is ideal for: * LMDS * Point-to-Point Radios * SATCOM Features Sub-Harmonically Pumped (x2) LO Input IP3: 17 dBm 2LO/RF Isolation: 48 dB Small Size: 0.97 mm2 Functional Diagram General Description The HMC330 MMIC is a broadband double balanced sub-harmonically pumped passive mixer that may be used as an upconverter or downconverter. The mixer requires no external matching or bias. This design was optimized to provide better 1dB compression performance as compared to the HMC266 under the same LO drive levels. The HMC330 provides greater than 38 dB LO to RF and 2LO to RF isolation performance. Measurements were made with the chip mounted and ribbon bonded into a 50-ohm microstrip test fixture that contains 5-mil alumina substrates between the chip and K-connectors. Measured data includes the parasitic effects of the assembly. RF connections to the chip were made with 0.076 mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). 5 MIXERS - CHIP Electrical Specifi cations, TA = +25 C LO = +14 dBm, IF = 2.5 GHz Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2LO to RF Isolation LO to RF Isolation 2LO to IF Isolation RF to IF Isolation LO to IF Isolation IP3 (Input) 1 dB Compression (Input) 40 30 50 27 38 +13 +4 Typ. 25 - 40 12.5 - 20 2-4 13 13 48 38 60 37 48 +17 +8 17 17 Max. GHz GHz GHz dB dB dB dB dB dB dB dBm dBm Units * Unless otherwise noted, all measurements performed as downconverter, IF= 2.5 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 94 v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Conversion Gain vs. Temperature @ LO = +14 dBm 0 Isolation @ LO = +14 dBm 0 -10 RF/IF LO/RF LO/IF 2LO/RF 2LO/IF CONVERSION GAIN (dB) -5 ISOLATION (dB) +25C -55C +85C -20 -30 -40 -50 -60 -70 -10 -15 -20 20 25 30 FREQUENCY (GHz) 35 40 -80 20 25 30 FREQUENCY (GHz) 35 40 5 MIXERS - CHIP 30 35 40 35 40 Conversion Gain vs. LO Drive 0 Return Loss@ LO = +14 dBm 0 CONVERSION GAIN (dB) RETURN LOSS (dB) -5 +12 dBm -5 -10 +10 dBm +14 dBm -10 LO RF -15 +8 dBm +16 dBm -20 20 25 30 FREQUENCY (GHz) 35 40 -15 0 5 10 15 20 25 FREQUENCY (GHz) IF Bandwidth @ LO = +14 dBm 0 RETURN LOSS CONVERSION GAIN Upconverter Performance Conversion Gain @ LO = +14 dBm 0 -5 RESPONSE (dB) CONVERSION GAIN (dB) 0 1 2 3 4 5 -5 -10 -10 -15 -15 -20 FREQUENCY (GHz) -20 20 25 30 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 95 v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Input IP3 vs. LO Drive * 30 Input IP3 vs. Temperature @ LO = +14 dBm * 30 25 IP3 (dBm) +12 dBm +14 dBm +16 dBm 25 IP3 (dBm) -55C +25C +85C 20 20 15 15 5 MIXERS - CHIP 10 20 25 30 FREQUENCY (GHz) 35 40 10 20 25 30 FREQUENCY (GHz) 35 40 Input IP2 vs. LO Drive * 95 Input IP2 vs. Temperature @ LO = +14 dBm * 95 -55C +25C +85C 90 IP2 (dBm) 85 IP2 (dBm) 85 80 35 40 20 +12 dBm +14 dBm +16 dBm 90 80 20 25 30 FREQUENCY (GHz) 25 30 FREQUENCY (GHz) 35 40 Input P1dB vs. Temperature @ LO = +14 dBm 15 14 13 12 P1dB (dBm) 11 10 9 8 7 6 5 25 30 35 40 FREQUENCY (GHz) +25C -55C +85C MxN Spurious Outputs as a Down Converter nLO mRF -3 -2 -1 0 1 2 3 RF = 30.5 GHz @ -10 dBm LO = 14 GHz @ +14 dBm All values in dBc below IF output power level. 75 85 71 71 44 61 35 x 5 61 26 5 4 3 2 1 0 * Two-tone input power = -10 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 96 v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +27 dBm -65 to +150 C -55 to +85 C 5 Outline Drawing Die Packaging Information [1] Standard WP-8 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 97 MIXERS - CHIP v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 3 mil Ribbon Bond 5 MIXERS - CHIP Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 3 mil Ribbon Bond Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 5 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v01.0301 HMC330 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz Notes: 5 MIXERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 99 |
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