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TYPICAL PERFORMANCE CURVES
APT50GT60BRDL(G) 600V
APT50GT60BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode Combi IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G E G
TO -24 7
C
E
C
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT50GT60BRDL(G) UNIT Volts
600 30
@ TC = 25C
110 52 150 150A @ 600V 446 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 1.7 4 2.0 2.2 50
2
5 2.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C)
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
Rev B 11-2008 052-6359
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1250 120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GT60BRDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
4 5
MIN
TYP
MAX
UNIT
2500 250 155 7.5 240 20 110 150 14 32 240 36 995 1110 1070 14 32 270 95 1035 1655 1505 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 5 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A RG = 5
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.28 .61 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
052-6359 Rev B
11-2008
TYPICAL PERFORMANCE CURVES
160
V
GE
APT50GT60BRDL(G)
200 15V 13V 11V 10V 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 8V 7V 6V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 9V
= 15V
140 IC, COLLECTOR CURRENT (A) 120 TJ = 25C 100 TJ = -55C 80 TJ = 125C 60 40 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) 250 VCE = 480V
I = 50A C T = 25C
J
TJ = -55C
VCE = 120V VCE = 300V
TJ = 25C TJ = 125C
FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3.0 2.5 IC = 50A 2.0 1.5 1.0 0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
5
IC = 100A
4 IC = 100A 3 IC = 50A 2 IC = 25A
IC = 25A
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
Lead Temperature Limited
052-6359
Rev B 11-2008
APT50GT60BRDL(G)
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 350
20 VGE = 15V
300
250
15
VGE =15V,TJ=125C VGE =15V,TJ=25C
200
10
150 50 VCE = 400V RG = 5 20 40 60 80 100 125 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 160 140
RG = 5, L = 100H, VCE = 400V
5 VCE = 400V
TJ = 25C, or 125C RG = 5 L = 100H
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 90 80 70 tr, RISE TIME (ns) tf, FALL TIME (ns) 60 50 40 30 20 10 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 5
G
0
0
0
L = 100H
0
RG = 5, L = 100H, VCE = 400V
120 100 80 60 40 20 0
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 EOFF, TURN OFF ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0
TJ = 25C
V = 400V CE V = +15V GE R = 5
G
4000
TJ = 125C
TJ = 125C
3000
2000
1000
TJ = 25C
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10,000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5,000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 5
G
Eon2,100A
Eon2,100A
8,000
4,000
Eoff,100A
6,000
3,000
4,000 Eoff,100A
11-2008
Eoff,50A Eon2,50A
2,000
Eon2,50A Eoff,50A Eon2,25A
2,000
Eoff,25A Eon2,25A
1,000
Eoff,25A
052-6359 Rev B
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
4,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GT60BRDL(G)
C, CAPACITANCE ( F)
P
1,000
500
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.30 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.25
0.20
0.7
0.15
0.5
Note:
0.10
PDM
0.3 SINGLE PULSE
t1 t2
0.05
0.1 0.05
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0
120 FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL Junction temp. (C) 0.114 Power (watts) 0.113 Case temperature. (C) 0.0276 0.0057
10
T = 125C J T = 75C C D = 50 % = 400V V CE R = 5
G
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
2
10 20
052-6359
Rev B 11-2008
APT50GT60BRDL(G)
Gate Voltage
APT50DL60
10% td(on) tr Collector Current 90% TJ = 125C
V CC
IC
V CE
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6359 Rev B
11-2008
TYPICAL PERFORMANCE CURVES
APT50GT60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF (AV) IF (RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT50GT60BRDL(G) UNIT
50 150 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN TYP MAX UNIT
1.25 2.0 1.25
MIN TYP
1.6
Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.7 ZJC, THERMAL IMPEDANCE (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0
Note:
52 399 1498 9 649 3734 13 284 5134 34 -
IF = 50A, diF/dt = -200A/s VR = 400V, TC = 25C
-
nC Amps ns nC Amps ns nC Amps
IF = 50A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 50A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Rev B 11-2008 052-6359
TJ (C)
0.316
Dissipated Power (Watts)
TC (C)
0.312
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
0.0046
0.1483
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
120 TJ= 125C 100 IF, FORWARD CURRENT (A) TJ= 55C 80 TJ= 25C 60 40 20 0 TJ= 150C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A
APT50GT60BRDL(G)
T = 125C J V = 400V
R
50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
8000 7000 6000 5000 4000 3000 2000 1000
100A
40 35 30 25 20 15 10 5 0
50A 100A
50A 25A
25A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
QRR
Duty cycle = 0.5 TJ = 126C
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF)
75 100 125 150 175 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
25
50
450 400 350 300 250 200 150 100 50 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0
052-6359 Rev B
11-2008
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT50GT60BRDL(G)
D.U.T.
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode)
Rev B 11-2008 052-6359
Emitter (Anode)
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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