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SMD Switching Diode
COMCHIP
CDSH6-4448-G
High Speed RoHS Device Features
-Fast Switching Speed -For general purpose switching applications. -High conductance.
0.051(1.30) 0.043(1.10) 0.067(1.70) 0.059(1.50)
SOT-563
Mechanical data
Case: SOT-563, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208
0.022(0.55) 0.018(0.45) 0.024(0.60) 0.021(0.52)
0.006(0.16) 0.004(0.09) 0.067(1.70) 0.059(1.50)
Marking: KAL Circuit diagram
C1 NC A2
0.011(0.27) 0.007(0.17)
0.002(0.05)max
0.012(0.30) 0.004(0.10)
A1
NC
C2
Dimensions in inches and (millimeters)
Maximum Rating (at TA=25
Parameter
Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward continuous current Averaged rectified output current Peak forward surge current Power dissipation Thermal resistance, junction to air Junction temperature Storage temperature @t=1.0s @T=1.0s
O
C unless otherwise noted) Symbol
VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RJA TJ TSTG
O
Max
100 80 57 500 250 4 2 150 833 150 -65 to +150
Unit
V V V mA mA A mW
O
C/W
O
C C
O
Electrical Characteristics (at TA=25
Parameter
Reverse breakdown voltage Reverse voltage leakage current IR=2.5A VR=70V VR=20V IF=5mA IF=10mA IF=100mA IF=150mA VR=6V, f=1MHz
C unless otherwise noted) Symbol
VBR IR 0.62 VF
Conditions
Min
80
Max
A 0.1 25 0.72 0.855 1 1.25 3.5 4
Unit
V A nA
Forward voltage
V
Diode capacitance Reverse recovery time
CT trr
pF nS
IF=IR=10mA, Irr=0.1xIR, RL=100
REV:B
QW-B0043
Page 1
Comchip Technology CO., LTD.
SMD Switching Diode
Typical Characteristics (CDSH6-4448-G)
Fig.1 Forward Power Derating Curve
250
COMCHIP
Fig.2 Typical Forward Characteristics
1000
PD, Power Dissipation (mW)
200
IF, Instantaneous Forward Current (mA)
100
TA=125 OC
O
TA=75 C
150
10
TA=25 C
O
TA=0 C
O
100
TA=-40 C
O
1
50
0 0 50 100 150
O
0.1 0 0.4 0.8 1.2 1.6
200
TA, Ambient Temperature (
C)
VF, Instantaneous Forward Voltage (V)
Fig.3 Typical Diode Capacitance Characteristics
2.5
TJ=25 C f=1MHz
O
Fig.4 Typical Reverse Current Characteristics
10000
TA=125 C
O
CT, Diode Capacitance (pF)
IR, Reverse Current (nA)
2.0
1000
TA=75 C
O
1.5
100
1.0
10
TA=25 OC
TA=0 C
O
0.5
1
TA=-40 C
O
0 0 10 20 30 40
0.1 0 20 40 60 80 100
VR, Reverse Voltage (V)
VR, Reverse Voltage (V)
REV:B
QW-B0043
Page 2
Comchip Technology CO., LTD.

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