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Freescale Semiconductor Technical Data
Document Number: MD7IC2050N Rev. 0, 8/2009
RF LDMOS Wideband Integrated Power Amplifiers
The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 2025 MHz Gps (dB) 30.5 PAE (%) 34.7 Output PAR (dB) 8.7 ACPR (dBc) - 37.4
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
1880 - 2100 MHz, 10 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
* Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 20 Watts to 80 Watts CW Pout * Typical Pout @ 3 dB Compression Point ] 74 Watts CW 1880 MHz * Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 30.3 30.2 30.1 PAE (%) 35.2 34.9 34.8 Output PAR (dB) 8.6 8.6 8.7 ACPR (dBc) - 34.9 - 36.3 - 36.9
CASE 1618 - 02 TO - 270 WB - 14 PLASTIC MD7IC2050NR1
CASE 1621 - 02 TO - 270 WB - 14 GULL PLASTIC MD7IC2050GNR1
Features * 100% PAR Tested for Guaranteed Output Power Capability * Production Tested in a Symmetrical Doherty Configuration * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * On - Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
CASE 1617 - 02 TO - 272 WB - 14 PLASTIC MD7IC2050NBR1
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 1
RF Device Data Freescale Semiconductor
VDS1A RFinA
CARRIER (2) RFout1/VDS2A
VGS1A VGS2A VGS1B VGS2B
Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1) PEAKING (2)
VDS1A VGS2A VGS1A RFinA NC NC NC NC RFinB VGS1B VGS2B VDS1B
1 2 3 4 5 6 7 8 9 10 11 12
14
RFout1/VDS2A
13
RFout2/VDS2B
RFinB VDS1B
RFout2/VDS2B
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design.
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ Pin
Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +150 150 225 28
Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 81C, Pout = 50 W CW Stage 1A, 28 Vdc, IDQ1A = 30 mA Stage 1B, 28 Vdc, IDQ1B = 30 mA Stage 2A, 28 Vdc, IDQ2A = 230 mA Stage 2B, 28 Vdc, VG2B = 1.4 Vdc Case Temperature 73C, Pout = 10 W CW Stage 1A, 28 Vdc, IDQ1A = 30 mA Stage 1B, 28 Vdc, IDQ1B = 30 mA Stage 2A, 28 Vdc, IDQ2A = 230 mA *Stage 2B, 28 Vdc, VG2B = 1.4 Vdc RJC 8.2 6.1 1.8 1.4 8.3 3.6 1.9 *Stage 2B is turned off C/W Symbol Value (2,3) Unit
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 2 RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 - Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = IDQ1B = 30 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = IDQ1B = 30 mAdc, Measured in Functional Test) Stage 2 - Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = 230 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = 230 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc)
VGS(th) VGS(Q) VGG(Q)
1.2 -- 4.1
1.9 3 5.5
2.7 -- 7.1
Vdc Vdc Vdc
IDSS IDSS IGSS
-- -- --
-- -- --
10 1 1
Adc Adc Adc
VGS(th) VGS(Q) VGG(Q) VDS(on)
1.2 -- 4.1 0.1
2 3 5.5 0.3
2.7 -- 7.1 1.2
Vdc Vdc Vdc Vdc
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg., f = 2025 MHz, Single - Carrier W - CDMA, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio 1. 2. 3. 4. Gps PAE PAR ACPR 28.5 32.0 8.0 -- 30.5 34.7 8.7 - 37.4 33.0 -- -- - 34.0 dB % dB dBc
Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
(1)
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, 2010 - 2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 30 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature with 4.7 k Gate Feed Resistors ( - 30 to 85C) (2) Gain Flatness in 15 MHz Bandwidth @ Pout = 10 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) P1dB P3dB IMDsym -- -- -- 60 74 55 -- -- -- W W MHz
VBWres IQT GF G P1dB
-- -- -- -- --
70 2.64 0.1 0.033 0.008
-- -- -- -- --
MHz % dB dB/C dBm/C
Typical W - CDMA Broadband Performance -- 1880 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg., Single - Carrier W - CDMA, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 30.3 30.2 30.1 PAE (%) 35.2 34.9 34.8 Output PAR (dB) 8.6 8.6 8.7 ACPR (dBc) - 34.9 - 36.3 - 36.9 IRL (dB) - 21 - 21 - 22
1. Measurement made with device in a Symmetrical Doherty configuration. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 4 RF Device Data Freescale Semiconductor
VGS1A
VGS2A
VDS1A C1
C7
VDS2A
R2 R1 C11 C17
C9 C15 C3 C18 C4
CUT OUT AREA
COUPLER 1 R5
C
C13
P
C14
C12 R3 R4
C19
C20 C5 C10 C8 C16 C6 C21 MD7IC2050N Rev. 1 VDS2B
C2 VGS1B VGS2B VDS1B
Figure 3. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part C1, C2, C3, C4, C5, C6 C7, C8 C9, C10 C11, C12, C13, C14 C15, C16, C17, C18, C19, C20 C21 R1, R2, R3, R4 R5 Coupler 1 PCB Description 10 F, 50 V Chip Capacitors 4.7 pF Chip Capacitors 5.6 pF Chip Capacitors 39 pF Chip Capacitors 4.7 F, 50 V Chip Capacitors 1.0 pF Chip Capacitor 4.7 k, 1/4 W Chip Resistors 50 , 1/4 W Thick Film Chip Resistor 1.8 - 2.0 GHz Hybrid 3 dB Coupler 0.020, r = 3.5 Part Number GRM55DR61H106KA88L ATC600F4R7BT250XT ATC600F5R6BT250XT ATC600F390JT250XT GRM31CR71H475KA12L ATC600F1R0BT250XT CRCW12064701KEA RK73B2BTTD510J GSC351 - HYB1900 RF - 35 Manufacturer Murata ATC ATC ATC Murata ATC Vishay KOA Speer Soshin Taconic
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 5
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 4. Possible Circuit Topologies
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
30.8 30.7 30.6 Gps, POWER GAIN (dB) 30.5 30.4 30.3 30.2 30.1 30 29.9 29.8 1880 1900 PARC ACPR 1920 1940 1960 1980 2000 2020 Gps PAE 35 34 33 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA 32 VG2B = 1.4 Vdc, Single-Carrier W-CDMA 31 3.84 MHz Channel Bandwidth -29 IRL Input Signal PAR = 9.9 dB @ -31 0.01% Probability on CCDF -33 -35 -37 -39 2040 PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
-18 ACPR (dBc) -19 -20 -21 -22 -23
-0.4 -0.8 -1.2 -1.6 -2 -2.4 PARC (dB)
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 10 Watts Avg.
-10 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ1A = IDQ1B = 30 mA IDQ2A = 230 mA, VG2B = 1.4 Vdc, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2017.5 MHz -20 IM3-U -30 IM5-U -40 IM7-L IM7-U -50 1 10 TWO-TONE SPACING (MHz) 100 IM5-L IM3-L
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing
31 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 30.5 Gps, POWER GAIN (dB) 30 29.5 29 28.5 28 1 0 -1 dB = 10.41 W -1 -2 dB = 13.56 W -2 PAE -3 -4 -5 3 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 6 9 12 15 18 21 ACPR -3 dB = 17.24 W PARC 23 18 27 38 VDD = 28 Vdc IDQ1A = IDQ1B = 30 mA 33 IDQ2A = 230 mA VG2B = 1.4 Vdc 28 f = 2017.5 MHz -30 PAE, POWER ADDED EFFICIENCY (%) -32 -34 -36 -38 -40 -42 ACPR (dBc)
Gps
48 43
24
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
31 30.5 30 Gps, POWER GAIN (dB) 29.5 29 28.5 28 27.5 27 26.5 26 1 2025 MHz 2010 MHz 2010 MHz 2017.5 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. f = 2010 MHz 2017.5 MHz 2025 MHz ACPR 100 90 80 70 60 PAE 50 40 Gps 30 20 10 0 100 PAE, POWER ADDED EFFICIENCY (%) -20 -22.5 -25 -27.5 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6 -30 -32.5 -35 -37.5 -40 -42.5 -45
VDD = 28 Vdc, IDQ1A = IDQ1B = 30 mA IDQ2A = 230 mA, VG2B = 1.4 Vdc, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2025 MHz 2017.5 MHz
Figure 8. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
35 Gain 30 25 GAIN (dB) 20 15 10 5 1450 IRL VDD = 28 Vdc Pin = 0 dBm IDQ1A = IDQ1B = 30 mA IDQ2A = 230 mA VG2B = 1.4 Vdc 1650 1850 2050 2250 -7 -14 -21 -28 -35 -42 -49 2450 IRL (dB) 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2 4 6 8 10 12 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 11. Single - Carrier W - CDMA Spectrum MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 8 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg. f MHz 1995 2000 2005 2010 2015 2020 2025 2030 2035 Zin = Zin W 60.12 - j33.28 59.30 - j32.57 58.41 - j32.06 57.41 - j31.31 56.31 - j30.27 55.94 - j29.62 55.28 - j28.90 54.75 - j28.12 54.39 - j27.55 Zload W 11.79 - j6.72 11.78 - j6.78 11.78 - j6.85 11.78 - j6.92 11.79 - j7.00 11.81 - j7.08 11.81 - j7.16 11.84 - j7.24 11.80 - j7.33
Note: Measured with Peaking side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 12. Series Equivalent Input and Load Impedance -- Carrier Side
VDD = 28 Vdc, IDQ1A = IDQB = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg. f MHz 1995 2000 2005 2010 2015 2020 2025 2030 2035 Zin = Zin W 60.12 - j33.28 59.30 - j32.57 58.41 - j32.06 57.41 - j31.31 56.31 - j30.27 55.94 - j29.62 55.28 - j28.90 54.75 - j28.12 54.39 - j27.55 Zload W 1.86 - j11.38 1.80 - j11.24 1.71 - j11.12 1.64 - j11.00 1.58 - j10.91 1.51 - j10.78 1.45 - j10.66 1.38 - j10.56 1.33 - j10.40
Note: Measured with Carrier side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance -- Peaking Side MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = IDQB = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc 52 50 Pout, OUTPUT POWER (dBm) 48 46 44 42 40 38 36 34 32 30 0 2 4 6 8 10 12 14 16 18 20 Pin, INPUT POWER (dBm) Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2010 2025 P1dB Watts 40 38.9 dBm 46 45.9 49 47.9 P3dB Watts dBm 46.9 46.8 f = 2010 MHz f = 2025 MHz f = 2010 MHz f = 2025 MHz f = 2025 MHz Ideal Actual f = 2010 MHz
Test Impedances per Compression Level f (MHz) 2010 2025 P1dB P1dB Zsource 73.6 + j31.1 68.9 + j26.7 Zload 6.8 - j13.7 8.3 - j14.3
Figure 14. CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 10 RF Device Data Freescale Semiconductor
VGS1A
VGS2A
VDS1A C1
C7 C15
VDS2A
R2 R1
C9 C3 C11 C17 C18 C13 CUT OUT AREA C4
COUPLER 1 R5
C C14
P
C20 C12 R3 R4 C8 C2 VGS1B VGS2B VDS1B C16 VDS2B C19 C5 C10 MD7IC2050N Rev. 1 C6 C21
Figure 15. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Layout -- 1880 MHz
Table 7. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Designations and Values -- 1880 MHz
Part C1, C2, C3, C4, C5, C6 C7, C8 C9, C10 C11, C12, C13, C14 C15, C16 C17, C18, C19, C20 C21 R1, R2, R3, R4 R5 Coupler 1 PCB Description 10 F, 50 V Chip Capacitors 6.8 pF Chip Capacitors 15 pF Chip Capacitors 33 pF Chip Capacitors 6.8 F, 50 V Chip Capacitors 2.2 F, Chip Capacitors 0.9 pF Chip Capacitor 4.7 k, 1/4 W Chip Resistors 50 , 1/4 W Thick Film Chip Resistor 1.8 - 2.0 GHz Hybrid 3 dB Coupler 0.020, r = 3.5 Part Number GRM55DR61H106KA88L ATC600F6R8BT250XT ATC600F150JT250XT ATC600F330JT250XT GRM32CF51H685ZA01L GRM31CR61H225KA88L ATC600F0R9BT250XT CRCW12064701FKEA RK73B2BTTD510J GSC351 - HYB1900 RO4350B Manufacturer Murata ATC ATC ATC Murata Murata ATC Vishay KOA Speer Soshin Rogers
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS
30.5 30.45 30.4 Gps, POWER GAIN (dB) 30.35 30.3 30.25 30.2 30.15 30.1 ACPR Gps IRL 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF PAE 35.5 VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ1A = IDQ1B = 30 mA 35.25 IDQ2A = 230 mA, VG2B = 1.4 Vdc, Single-Carrier W-CDMA 35 34.75 34.5 -34 -34.6 ACPR (dBc) -35.2 -35.8 -36.4 1890 1900 f, FREQUENCY (MHz) 1910 -37 1920 PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
-20.5 -20.9 -21.3 -21.7 -22.1 -22.5
-1.2 -1.23 -1.26 -1.29 -1.32 -1.35 PARC (dB)
30.05 PARC 30 1880
Figure 16. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 10 Watts Avg. -- 1880 MHz
35 Gain 30 25 GAIN (dB) 20 15 10 5 1450 IRL VDD = 28 Vdc Pin = 0 dBm IDQ1A = IDQ1B = 30 mA IDQ2A = 230 mA VG2B = 1.4 Vdc 1650 1850 2050 2250 -18 -20 -22 -24 -26 -28 2450 IRL (dB) -16
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response -- 1880 MHz
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 12 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg. f MHz 1725 1750 1775 1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050 2075 Zin = Zin W 24.58 + j28.09 30.62 + j35.84 39.80 + j43.59 53.16 + j51.72 75.48 + j54.32 101.49 + j44.03 127.43 + j11.39 113.52 - j23.46 92.03 - j36.95 74.95 - j38.10 64.95 - j35.67 59.30 - j32.57 55.28 - j28.90 52.85 - j26.07 51.34 - j23.91 Zload W 13.68 - j7.83 14.09 - j7.95 14.42 - j8.13 14.72 - j8.33 15.02 - j8.57 15.26 - j8.91 15.47 - j9.29 15.59 - j9.67 15.66 - j10.15 15.64 - j10.65 15.59 - j11.22 15.41 - j11.76 15.20 - j12.36 14.84 - j12.97 14.42 - j13.56 Zin
VDD = 28 Vdc, IDQ1A = IDQB = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 W Avg. f MHz 1725 1750 1775 1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050 2075 = Zin W 24.58 + j28.09 30.62 + j35.84 39.80 + j43.59 53.16 + j51.72 75.48 + j54.32 101.49 + j44.03 127.43 + j11.39 113.52 - j23.46 92.03 - j36.95 74.95 - j38.10 64.95 - j35.67 59.30 - j32.57 55.28 - j28.90 52.85 - j26.07 51.34 - j23.91 Zload W 4.10 - j18.22 3.61 - j17.55 3.09 - j16.79 2.61 - j16.00 2.31 - j15.22 1.99 - j14.46 1.71 - j13.71 1.47 - j12.96 1.27 - j12.19 1.15 - j11.44 1.04 - j10.70 1.00 - j9.97 0.98 - j9.28 1.05 - j8.57 1.16 - j7.91
Note: Measured with Peaking side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Output Matching Network
Note: Measured with Carrier side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Output Matching Network
Zload =
Zload =
Device Under Test
Device Under Test
Z
in
Z
load
Z
in
Z
load
Figure 18. Series Equivalent Input and Load Impedance -- Carrier Side -- 1880 MHz
Figure 19. Series Equivalent Input and Load Impedance -- Peaking Side -- 1880 MHz
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 14 RF Device Data Freescale Semiconductor
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 15
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 16 RF Device Data Freescale Semiconductor
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 RF Device Data Freescale Semiconductor 17
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 18 RF Device Data Freescale Semiconductor
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MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 20 RF Device Data Freescale Semiconductor
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MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 22 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages * AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Aug. 2009 * Initial Release of Data Sheet Description
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MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
Rev. 24 0, 8/2009 Document Number: MD7IC2050N
RF Device Data Freescale Semiconductor

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