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| JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PFM) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -16 -0.8 70 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA1804 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V VCEsat VBE Collector-emitter saturation voltage IC=-6A;IB=-0.6 A IC=-4A ; VCE=-5V -2.0 V Base-emitter voltage -1.5 V ICBO Collector cut-off current VCB=-120V IE=0 -5 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -5 |I A hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT COB Transition frequency IC=-1A ; VCE=-5V IE=0; VCB=10V;f=1MHz 30 MHz Output capacitance 420 pF hFE classifications R 55-110 O 80-160 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1804 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1804 4 JMnic Product Specification Silicon PNP Power Transistors 2SA1804 5 |
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