View APTDC30H1201G_4554722.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTDC30H1201G
SiC Diode Full Bridge Power Module
3 CR1 5 6 CR2 CR4
* * * Benefits * * * * * * * All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration
VRRM = 1200V IF = 30A @ Tc = 80C
4 CR3 1 2
Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers
Features
7
8
9 10
Absolute maximum ratings
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 1200 TC = 80C TC = 25C 30 370 Unit V A
February, 2009 1-3 APTDC30H1201G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTDC30H1201G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C IF = 30A Tj = 175C Tj = 25C VR = 1200V Tj = 175C IF = 30A, VR = 600V di/dt =1500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.3 96 168 120 288 207 Max 1.8 3.0 600 3000 Unit V A nC pF
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.63 175 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
2-3
APTDC30H1201G - Rev 0
February, 2009
APTDC30H1201G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 0.0001 0.001 0 0.00001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 300
TJ=25C
60
IF Forward Current (A) IR Reverse Current (A)
50 40 30
TJ=125C TJ=75C
225
150
TJ=75C TJ=125C TJ=175C TJ=25C
20
TJ=175C
75
10 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
0 400
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
2100 C, Capacitance (pF) 1800 1500 1200 900 600 300 0 1 10 100 VR Reverse Voltage 1000
February, 2009
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3
APTDC30H1201G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein

▲Up To Search▲

Price & Availability of APTDC30H1201G

	To Download APTDC30H1201G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .