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APTGT400SK60D3G
Buck Chopper Trench + Field Stop IGBT Power Module
3
VCES = 600V IC = 400A @ Tc = 80C
Q1 4 5
Application * AC and DC motor control * Switched Mode Power Supplies
1
2
Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 500 400 800 20 1250 800A @ 520V Unit V
September, 2008 1-5 APTGT400SK60D3G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT400SK60D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 400A Tj = 150C VGE = VCE , IC = 6.4 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 500 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 400A RG = 1.5 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 400A RG = 1.5 VGE = 15V Tj = 25C VBus = 600V Tj = 150C IC = 400A Tj = 25C RG = 1.5 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 24 1.5 0.75 4.2 110 50 490 50 130 60 530 70 3.2 3.4 15 15.5 2000 ns Max Unit nF C
ns
mJ
A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 300V IF = 400A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 500 750 400 1.6 1.5 125 180 18.8 39.5 4.4 9.6 2 Unit V A A V ns C mJ
September, 2008 2-5 APTGT400SK60D3G - Rev 0
di/dt =4800A/s
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APTGT400SK60D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.12 0.20 175 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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APTGT400SK60D3G - Rev 0
September, 2008
APTGT400SK60D3G
Typical Performance Curve
Output Characteristics (VGE=15V) 600 500 IC (A) 400 IC (A)
TJ=150C
Output Characteristics 600
TJ = 150C
500 400 300 200 100
TJ=25C
VGE=13V VGE=15V VGE=9V
300 200 100 0 0 0.5 1 1.5 2 2.5 VCE (V) Transfert Characteristics
TJ=25C
0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
Energy losses vs Collector Current 35 30 25 E (mJ) 20 15 10 5
Eon Err VCE = 300V VGE = 15V RG = 1.5 TJ = 150C
800
600 IC (A)
Eoff
400
200
TJ=150C
0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 2.5 5 7.5 Gate Resistance (ohms) 10
Err VCE = 300V VGE =15V IC = 400A TJ = 150C
0 9 10 11 0 200 400 IC (A) Reverse Bias Safe Operating Area 1000
Eon
600
800
800
Eoff
IC (A)
600 400 200 0 0 100 200 300 400 500 600 700 VCE (V)
VGE=15V TJ=150C RG=1.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02
IGBT
0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTGT400SK60D3G - Rev 0
September, 2008
0.9
APTGT400SK60D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
ZCS VCE=300V D=50% RG=1.5 TJ=150C
Forward Characteristic of diode 600 500 400 IF (A) 300 200 100
TJ=25C TJ=150C
60
ZVS
Tc=85C
40
Hard switching
20
0 0 100 200 300 IC (A) 400 500
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W)
Diode
0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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September, 2008

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