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| Product Specification www.jmnic.com Silicon NPN Power Transistor BU941 DESCRIPTION High Voltage DARLINGTON APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25ae Junction Temperature Storage Temperature Range VALUE 500 400 5 15 30 1 5 180 200 -65~200 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.97 UNIT ae /W Product Specification www.jmnic.com Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP BU941 SYMBOL MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH 400 V VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA IC= 10 A; IB= 250mA 1.6 V Collector-Emitter Saturation Voltage 1.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA 2.5 V VBE(sat)-3 ICES ICEO Base-Emitter Saturation Voltage IC= 12 A; IB= 300mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125ae VCE= 450V; IB= 0 VCE= 450V; IB= 0;Tj= 125ae VEB= 5V; IC= 0 2.7 0.1 0.5 0.1 0.5 20 V Collector Cutoff Current mA Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 5A ; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A 2.5 V Product Specification www.jmnic.com Silicon NPN Power Transistor BU941 |
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