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| Single Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 41/08 PSB 41/12 PSB 41/14 PSB 41/16 PSB 41/18 PSB 41 IdAVM VRRM = 45 A = 800-1800 V ~ ~ Maximum Ratings 45 550 600 500 550 1510 1520 1250 1300 -40 ... + 150 150 -40 ... + 125 A A A A A A2 s A2 s A2 s A2 s C C C V V Nm g Symbol IdAVM IFSM Test Conditions TC = 100C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i2 dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) 2500 3000 5 100 Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM Characteristic Value 0.3 5.0 1.72 0.8 8 1.45 0.36 1.9 0.475 21 12.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 41 IF(OV) -----IFSM 200 [A] 150 1:TVJ= 150C 2:TVJ= 25C IFSM (A) TVJ=45C TVJ=150C 550 500 4 10 2 As 1.6 1.4 1.2 1 100 10 3 TVJ=45C TVJ=150C 50 IF 0 0.5 1 1.5 VF[V] 2 2.5 1 0 VRRM 0.8 1/2 VRRM 2 0.6 0.4 10 0 10 1 1 VRRM 10 t[ms] 10 2 10 3 2 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 80 85 90 95 100 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 PSB 41 0.26 0.14 = RTHCA [K/W] 0.39 TC 50 DC sin.180 40 rec.120 rec.60 rec.30 30 0.64 105 110 115 1.14 120 125 130 I20 D DC sin.180 rec.120 rec.60 rec.30 IFAVM 20 40 0 [A] 2.64 135 140 145 150 10 C Tamb 50 100 [K] 150 0 50 100 T (C) C 150 200 Fig. 4 Power dissipation versus direct output current and ambient temperature K/W Fig.5 Maximum forward current at case temperature 3 2 Z thJK Z thJC 1 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions |
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