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| Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet VRSM VDSM V 900 1300 1500 1700 VRRM VDRM V 800 1200 1400 1600 Version 1 PSKT 26/08io1 PSKT 26/12io1 PSKT 26/14io1 PSKT 26/16io1 Version 8 PSKT PSKT PSKT PSKT Type PSKT 26 PSKH 26 ITRMS ITAVM VRRM = 2x 50 A = 2x 32 A = 800-1600 V TO-240 AA Version 8 PSKH PSKH PSKH PSKH 26/08io8 26/12io8 26/14io8 26/16io8 1 2 3 6 7 4 5 26/08io8 26/12io8 26/14io8 26/16io8 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 75C; TC = 85C; TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 180 sine 180 sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 32 27 520 560 460 500 1350 1300 1050 1030 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A A A A A A A A2s A2s A2s A2 s A/s A/s V/s 3 67 1 542 PSKT Version 1 3 61 52 PSKT Version 8 3 1 52 i2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 PSKH Version 8 (di/dt)cr TVJ = TVJM repetitive, IT = 45 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 300 s Features (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight W W W V C C C V~ V~ International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1 Applications 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 DC motor control Softstart AC motor controller Light, heat and temperature control Mounting torque (M5) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g Advantages Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 80 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM Characteristic Values 3 1.64 0.85 11.0 1.5 1.6 100 200 0.2 10 450 200 2 typ. 150 50 6 0.88 0.44 1.08 0.54 12.7 9.6 50 mA V V m V V mA mA V mA mA VG 10 1: IGT, TVJ = 125C V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 1 2 3 5 4 6 TVJ = 25C; tP = 10 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s TVJ = TVJM; IT = 20 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module 4: PGAV = 0.5 W IGD, TVJ = 125C 5: PGM = 5W 6: PGM = 10 W 102 103 IG mA s s 0.1 100 101 mA 104 Fig. 1 Gate trigger characteristics 1000 C A K/W K/W K/W K/W mm mm m/s2 tgd TVJ = 25C s typ. other values see Fig. 8/9 100 Limit Creepage distance on surface Strike distance through air Maximum allowable acceleration 10 Optional accessories for module-type PSKT 26 version 1 Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red 1 10 100 mA IG 1000 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT/ PSKH Version 1 PSKT Version 8 PSKH Version 8 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 4 i2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKT 26 or 3 x PSKH 26 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 26 or 3 x PSKH 26 PSKT 26 PSKH 26 Z thJC(t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.88 0.92 0.95 0.98 1.01 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.019 0.029 0.832 ti (s) 0.0031 0.0216 0.191 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) PSKT 26 PSKH 26 ZthJK(t) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 1.08 1.12 1.15 1.18 1.21 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.019 0.029 0.832 0.2 ti (s) 0.0031 0.0216 0.191 0.45 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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