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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
FEATURES
* Metal case with ceramic insulator * All diffused design * Center amplifying gate * Guaranteed high dV/dt * Guaranteed high dI/dt
TO-200AB (E-PUK)
RoHS
COMPLIANT
* International standard case TO-200AB (E-PUK) * High surge current capability * Low thermal impedance * High speed performance * Lead (Pb)-free
PRODUCT SUMMARY
IT(AV) 720 A
TYPICAL APPLICATIONS
* Inverters * Choppers * Induction heating * All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) TEST CONDITIONS VALUES 720 Ths 55 1435 Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Range 25 11 000 A 11 500 605 553 400 to 800 10 to 30 - 40 to 125 V s C kA2s UNITS A C A C
IT(RMS)
I2 t
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 08 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50
ST333C..C
Document Number: 93678 Revision: 15-May-08
For technical questions, contact: ind-modules@vishay.com
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit
1630 1630 1350 720 50 VDRM 50 40 10/0.47
1420 1390 1090 550
2520 2670 2440 1450 50 VDRM -
2260 2330 2120 1220
7610 4080 2420 1230 50 VDRM -
6820 3600 2100 1027 V A/s 55 10/0.47 C /F A
55
40 10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 720 (350) 55 (75) 1435 11 000 11 500 9250 Sinusoidal half wave, initial TJ = TJ maximum 9700 605 553 428 391 6050 1.96 0.91 0.93 0.58 0.58 600 1000 m mA V kA2s kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code 10 VALUES MIN. MAX. 1000 1.1 s 30 UNITS A/s
Maximum turn-off time
tq
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Document Number: 93678 Revision: 15-May-08
ST333C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.09 0.04 0.020 0.010 9800 (1000) 83 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C
Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style
RthC-hs
TO-200AB (E-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.010 0.012 0.015 0.022 0.036 DOUBLE SIDE 0.011 0.012 0.015 0.022 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.007 0.012 0.016 0.023 0.036 DOUBLE SIDE 0.007 0.013 0.017 0.023 0.037 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93678 Revision: 15-May-08
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
130 Maxim um Allowable Heatsin k Tem perature (C) ST333C..C Series (Single Side Cooled) Rth J- hs (DC) = 0.09 K/W 120 110 100 90 80 70 60 50 40 30 20 0 30 60 90 120 180 DC 200 400 600 800 1000 1200 1400 1600 Average O n-state Current (A)
C o ndu ctio n Pe riod
130 Maximum Allowable Heatsink Temperature (C) 120 110 100 90 80 70 60 50 40 30 20 0 100 200 300 400 500 600 Average On -state Current (A) 30 60 90 120 180
C o nd uc tio n A ng le
ST333C..C Series ( Double Side Cooled ) Rth J-hs (DC) = 0.04 K/W
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30 M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (C ) 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 30 6 0 90 12 0 1 80 DC
Co nd uc tio n P e rio d
2 2 00 M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W ) ST 3 3 3 C ..C S e rie s (Sin g le S id e C o o le d ) R th J-hs ( D C ) = 0 .0 9 K / W 2 0 00 1 8 00 1 6 00 1 4 00 1 2 00 1 0 00 8 00 6 00 4 00 2 00 0 0 20 0 400 60 0 80 0 1 00 0 A v e ra g e O n -st a t e C u rre n t (A )
C o ndu ctio n A ng le
1 8 0 1 2 0 90 60 30
R M S Lim it
ST 3 3 3 C ..C S e r ie s TJ = 1 2 5C
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (C )
120 110 100 90 80 70 60 50 40 30 20 10 0 2 00 30
ST 3 3 3 C ..C S e r ie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K /W
M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )
130
C o nd uctio n A ng le
60 90 1 2 0 4 00 60 0 800 1 8 0 1 00 0
26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 10 0 0 800 600 400 200 0 0
DC 1 8 0 1 2 0 90 60 30
R M S L im it
C o ndu ctio n Pe rio d
S T3 3 3 C ..C Se rie s TJ = 1 2 5C 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0 A v e ra g e O n -st a t e C u rre n t (A )
A v e ra g e O n - st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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Document Number: 93678 Revision: 15-May-08
ST333C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
10000 Peak Half Sine W ave O n-state Current (A) 9500 9000 8500 8000 7500 7000 6500 6000 5500 5000 4500 1 10 100
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )
At An y Rated L oad Con dition And W ith Rated V RR M Applied Following Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
0 .1 S T3 3 3 C ..C Se r ie s
0 .0 1
S te a d y St a t e V a lu e R th J-hs = 0 .0 9 K /W (S in gle Sid e C o o le d ) R thJ-h s = 0 .0 4 K /W (D o u b le S id e C o o le d ) (D C O p e ra t io n )
ST333C..C Series
0 .0 0 1 0 .0 0 1
0 .0 1
0. 1
1
10
Sq u a re W a v e P u ls e D ur at io n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
12000 Peak Half Sine Wave O n-state Curren t (A)
Maximum Reverse Recovery Charge - Q rr (C)
Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration. C ontrol 11000 O f Con duction May Not Be M ain tained. Initial TJ = 125C 10000 No Voltage Reapplied Rated V RR M Reapplied 9000 8000 7000 6000 5000 ST333C..C Series
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f O n-state Current - di/dt (A/s) ST333C..C Series TJ = 125 C
I TM = 50 0 A 3 00 A 2 00 A 10 0 A 50 A
4000 0.01
0.1 Pulse T rain Duration (s)
1
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000 M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) Instantaneous On-state Current (A)
180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A / s) ST 3 3 3 C ..C S e rie s TJ = 1 2 5 C
IT M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A
T = 25C 1000
J
T = 125C
J
ST333C..C Series 100 0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 Instan tan eous O n-state V oltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Document Number: 93678 Revision: 15-May-08
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
1 E4
P e a k O n -st a te C u rre n t (A )
1 000 1 50 0
50 0
4 00 20 0
1 00
50 Hz 1 000 15 0 0
50 0
4 00
20 0
1 00
50 H z
1 E3
25 00 3 00 0 50 00
Snubb er c ircu it R s = 1 0 o hm s C s = 0 .47 F V D = 80 % V D RM
2 50 0 3 00 0 5 00 0 tp
Snubb er circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM ST33 3C ..C Serie s Sinuso idal pulse TC = 55C
tp
ST33 3 C..C Serie s Sin uso idal pulse TC = 40C
1 E2 1 E1
1E2
1E3
1 E4
1 E1
1E2
1E3
1E4
P ulse B a se w id th ( s)
Pu lse B a se w id th ( s)
Fig. 13 - Frequency Characteristics
1E4
Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM
100 0 50 0 40 0 2 00 10 0 50 Hz
P e a k O n - st a t e C ur re n t (A )
1E3
15 00 20 0 0 2 5 00 3 0 00
10 00 50 0
Snubbe r circuit R s = 1 0 o hm s C s = 0.47 F V D = 80 % V D RM ST3 33 C.. C Se ries Trap ezo id al p ulse TC = 4 0C di/d t = 50 A/s
10 0 40 0 2 00
50 Hz
1 5 00 20 00 2 50 0 3 00 0 ST33 3C. .C Se ries Trapezo idal p ulse TC = 55C di/dt = 1 00A /s
5 00 0 tp
50 00
tp
1E2 1 E1
1E2
1E3
1 E4
1E 1
1 E2
1 E3
1 E4
P u lse Ba se w id t h ( s)
P u lse Ba se w id th (s)
Fig. 14 - Frequency Characteristics
1 E4
P e a k O n - st a te C u rre n t (A )
Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V DR M
5 00 100 0 4 00 200 10 0 5 0 Hz
4 00 2 00 50 0 10 0 0 1 50 0 20 00 2 50 0 3 00 0 5 00 0 tp
10 0
5 0 Hz
1 E3
15 00 20 00 2 50 0 3 00 0
Snubb er c ircuit R s = 10 o hm s C s = 0 .47 F V D = 80 % V D RM ST33 3 C..C Serie s Trape zoidal pulse TC = 40C d i/dt = 100 A/s
50 00 tp
ST333 C.. C Se ries Trapezo id al p ulse TC = 55C di/dt = 10 0A /s
1 E2 1 E1
1 E2
1E3
1E4
1E1
1E 2
1 E3
1 E4
P u lse B ase w id t h ( s)
P u lse Ba se w id th ( s)
Fig. 15 - Frequency Characteristics
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Document Number: 93678 Revision: 15-May-08
ST333C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
1E4
3 5 10 tp
20 jo ule s pe r p ulse
ST3 33 C Se ries Rec tang ula r pulse di/dt = 50A /s 3 2 1 0 .5
P e a k O n - sta t e C u rre n t (A )
2 1
2 0 jou les p er pulse 10 5
1E3
0.5 0 .3 0.2 0.3 0.4
1E2
0.2 ST33 3C ..C Se ries Sinuso idal pulse
tp
1E1 1E1
1E2
1E3
1 E1 E 4 4
1 E1
1E2
1 E3
1E4
P u lse B ase w id t h ( s)
P u lse Ba se w id t h ( s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1 00 Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (b )
Tj=- 40 C Tj=25 C Tj=12 5 C
In st a n ta n e o u s G at e V o lt a ge ( V )
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
20 m s 10 m s 5m s 3 .3 m s
1 VGD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3 ) ( 4 )
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t (A )
Fig. 17 - Gate Characteristics
Document Number: 93678 Revision: 15-May-08
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ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
ORDERING INFORMATION TABLE
Device code
ST
1
1 2 3 4 5 6 7 8 9
33
2 -
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
Thyristor Essential part number 3 = Fast turn off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (E-PUK) Reapplied dV/dt code (for tq test condition) tq code dV/dt - tq combinations available
dV/dt (V/s) 20 50 100 200 400 10 CN DN EN --0 = Eyelet term. 12 CM DM EM FM* -DL EL FL* HL (gate and aux. cathode unsoldered leads) tq (s) 15 CL 18 CP DP EP FP HP 1 = Fast-on term. 20 CK DK EK FK HK 25 ---FJ HJ (gate and aux. cathode unsoldered leads) 30 ----HH 2 = Eyelet term. * Standard part number. (gate and aux. cathode soldered leads) All other types available only on request. 3 = Fast-on term. (gate and aux. cathode soldered leads)
10
-
Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075
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Document Number: 93678 Revision: 15-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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