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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION *High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V *Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) APPLICATIONS *Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 110 100 6 8 12 70 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature PC W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1233 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A, IB= 8mA B 2.0 V ICBO Collector Cutoff current VCB= 80V, IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 fT Current-Gain--Bandwidth Product hFE DC Current Gain Switching Times ton Turn-On Time tstg Storage Time w w scs .i w IC= 4A; VCE= 5V IC= 4A; VCE= 3V .cn mi e 1500 3.0 mA 20 MHz 0.6 s IC = 4A, IB1 = -IB2= 8mA; RL= 12.5; VCC= 50V 4.8 s tf Fall Time 1.6 s isc Websitewww.iscsemi.cn |
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