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TLCB / R / TG / Y5100
Vishay Semiconductors
Ultrabright LED, 5 mm Untinted Non-Diffused
Description
The TLC.51.. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP (AS) and InGaN technologies. The lens and the viewing angle is optimized to achieve best performance of light output and visibility.
19223
Features
* Untinted non diffused lens * Utilizing ultrabright AllnGaP (AS) and InGaN technology e2 * High luminous intensity * High operating tempreature: Tj (chip junction temperature) up to 125 C for AllnGaP devices * Luminous intensity and color categorized for each packing unit * ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AllnGaP, 1 kV for InGaN * Lead-free device
Applications
Interior and exterior lighting Outdoor LED panels Instrumentation and front panel indicators Central high mounted stop lights (CHMSL) for motor vehicles Replaces incandescent lamps Traffic signals Light guide design
Parts Table
Part TLCR5100 TLCY5100 TLCY5101 TLCTG5100 TLCB5100 Color, Luminous Intensity Red, IV > 11000 mcd (typ.) Yellow, IV > 7500 mcd (typ.) Yellow, IV > 5750 mcd to 20000 mcd True green, IV > 5000 mcd (typ.) Blue, IV > 1500 mcd (typ.) Angle of Half Intensity () 9 9 9 9 9 Technology AllnGaP on GaAs AllnGaP on GaAs AllnGaP on GaAs InGaN on SiC InGaN on SiC
Document Number 83176 Rev. 1.4, 16-Feb-05
www.vishay.com 1
TLCB / R / TG / Y5100
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified TLCR5100 , TLCY5100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient TLCTG5100 , TLCB5100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body Tamb 60 C tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 135 100 - 40 to + 100 - 40 to + 100 260 300 Unit V mA A mW C C C C K/W t 5 s, 2 mm from body Tamb 85 C tp 10 s Tamb 85 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 50 1 135 125 - 40 to + 100 - 40 to + 100 260 300 Unit V mA A mW C C C C K/W
Optical and Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Red
TLCR5100 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d
1) 1)
Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 A IF = 50 mA IF = 50 mA
Part TLCR5100
Symbol IV d p VF VR TCVF TCd
Min 4300 611
Typ. 11000 616 622 18 9 2.1
Max 622
Unit mcd nm nm nm deg
Dominant wavelength
2.7
V V mV/K nm/K
5 - 3.5 0.05
in one Packing Unit IVmax/IVmin 2.0
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Document Number 83176 Rev. 1.4, 16-Feb-05
TLCB / R / TG / Y5100
Vishay Semiconductors Yellow
TLCY5100 Parameter Luminous intensity
1)
Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 A IF = 50 mA IF = 50 mA
Part TLCY5100 TLCY5101
Symbol IV IV d p VF VR TCVF TCd
Min 3200 6900 585
Typ. 7500
Max 16000
Unit mcd mcd nm nm nm deg
Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d
1)
590 593 17 9 2.1
597
2.7
V V mV/K nm/K
5 - 3.5 0.1
in one Packing Unit IVmax/IVmin 2.0
True green
TLCTG5100 Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d
1)
Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 A IF = 30 mA IF = 30 mA
Part TLCTG5100
Symbol IV d p VF VR TCVF TCd
Min 1800 515
Typ. 5000 525 520 37 9 3.9
Max 535
Unit mcd nm nm nm deg
4.5
V V mV/K nm/K
5 - 4.5 0.02
in one Packing Unit IVmax/IVmin 2.0
Blue
TLCB5100 Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d
1)
Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 A IF = 30 mA IF = 30 mA
Part TLCB5100
Symbol IV d p VF VR TCVF TCd
Min 575 462
Typ. 1500 470 464 25 9 3.9
Max 476
Unit mcd nm nm nm deg
4.5
V V mV/K nm/K
5 - 5.0 0.02
in one Packing Unit IVmax/IVmin 2.0
Document Number 83176 Rev. 1.4, 16-Feb-05
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TLCB / R / TG / Y5100
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
160
PV -Power Dissipation (mW) I F-Forward Current ( mA )
60 50 40 30 20 10 0 0 20 40 60 80 100 120
16710
140 120 100 80 60 40 20 0 Yellow Red
Yellow Red
0
20
40
60
80
100
120
16708
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Ambient Temperature
160
PV -Power Dissipation (mW) I F-Forward Current ( mA )
60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
16711
140 120 100 80 60 40 20 0 Blue Truegreen
Blue Truegreen
0
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
16709
Figure 2. Power Dissipation vs. Ambient Temperature
Figure 5. Forward Current vs. Ambient Temperature
100 90
I F - Forward Current ( mA )
100 90
I F - Forward Current ( mA )
80 70 60 50 40 30 20 10
Red Yellow
80 70 60 50 40 30 20 10 0 2.5
Blue Truegreen
15974
0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F - Forward Voltage ( V )
16040
3.0 3.5 4.0 4.5 5.0 V F - Forward Voltage ( V )
5.5
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Forward Current vs. Forward Voltage
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Document Number 83176 Rev. 1.4, 16-Feb-05
TLCB / R / TG / Y5100
Vishay Semiconductors
10
IV rel - Relative Luminous Intensity I Vrel - Relative Luminous Intensity
10 Red Yellow
1
1
0.1
0.1
0.01 1
15978
0.01 10 IF - Forward Current ( mA ) 100
15979
1
10 IF - Forward Current ( mA )
100
Figure 7. Relative Luminous Flux vs. Forward Current
Figure 10. Relative Luminous Flux vs. Forward Current
10.00
I Vrel - Relative Luminous Intensity
10.00 Blue
IVrel - Relative Luminous Intensity
True Green 1.00
1.00
0.10
0.10
0.01 1
16042
0.01 10 IF - Forward Current ( mA ) 100
16039
1
10 IF - Forward Current ( mA )
100
Figure 8. Relative Luminous Flux vs. Forward Current
Figure 11. Relative Luminous Flux vs. Forward Current
1.2 Red 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 - Wavelength ( nm )
1.2 Yellow 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 - Wavelength ( nm )
I Vrel - Relative Luminous Intensity
16007
16008
I Vrel - Relative Luminous Intensity
Figure 9. Relative Intensity vs. Wavelength
Figure 12. Relative Intensity vs. Wavelength
Document Number 83176 Rev. 1.4, 16-Feb-05
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TLCB / R / TG / Y5100
Vishay Semiconductors
1.2 Blue 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 420 440 460 480 500 520 540 560 - W avelength ( nm )
1.2 True Green 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 - Wavelength ( nm )
I Vrel - Relative Luminous Intensity
16069
16068
Figure 13. Relative Intensity vs. Wavelength
I Vrel - Relative Luminous Intensity
Figure 14. Relative Intensity vs. Wavelength
Package Dimensions in mm
9612121
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Document Number 83176 Rev. 1.4, 16-Feb-05
TLCB / R / TG / Y5100
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83176 Rev. 1.4, 16-Feb-05
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