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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2681 DESCRIPTION With TO-3PFa package Complement to type 2SA1141 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 115 115 5 10 15 UNIT V V V A A Emitter-base voltage Open collector Collector current-peak TC=25ae 100 W 2 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC2681 SYMBOL MAX UNIT VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.45A 0.6 1.5 V VBE ICBO Base-emitter on voltage IC=4.5A ; VCE=2V VCB=80V; IE=0 1.2 2.0 V Collector cut-off current 50 |I A IEBO Emitter cut-off current VEB=5V; IC=0 50 |I A hFE -1 DC current gain IC=1A ; VCE=2V 60 200 hFE -2 DC current gain IC=4.5A ; VCE=2V 40 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency hFE-1 classifications R 60-120 Q IC=1A ; VCE=2V CHA IN 100-200 E SEM NG OND IC TOR UC 80 230 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2681 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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