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NJM2275
VHF/UHF BAND RF AMPLIFIER
GENERAL DESCRIPTION
The NJM2275 is a low current, low voltage RF amplifier, especially designed for VHF/UHF band. The center frequency of this narrow band amplifier is changed by external components.
PACKAGE OUTLINE
NJM2275F1
FEATURES
Wide Operating Voltage Low Operating Current High Gain Power Gain Voltage Gain Operating Frequency band High Isolation (OUT to IN) Bipolar Technology Package Outline 1.8V to 6V 0.8mA type. @ V+ =1.9V, no signal input 15dB @1.9V, 400MHz input 30dB @1.9V, 400MHz input, 1k load Up to 800MHz 45dB @1.9V, 400MHz SOT23-6 (MTP6)
PIN CONFIGULATION
Orientation Mark
1 2 3 Top View
Simplified Block Diagram
6 5 4
Pin Function 1. RF IN 2. GND 3. BIAS CAP 4. RF OUT 5. IREF 6. V+
RF IN 1 GND 2 BIAS CAP 3
V+ 6 I REF 5 RF OUT 4
RF IN 1 GND 2 BIAS CAP 3
V+ 6 I REF 5 RF OUT 4
Ver.2005-06-01
-1-
NJM2275
ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Power Dissipation RF Input Level Operating Temperature Storage Temperature SYMBOL V+ PD Pinmax Topr Tstg RATINGS 10.0 200 6 - 40 to + 85 - 40 to +125 (Ta=25C) UNIT V mW dBm C C (Ta=25C) MIN. 1.8 TYP. 1.9 MAX. 6.0 UNIT V
RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage SYMBOL V+ TEST CONDITIONS
ELECTRICAL CHARACTERISTICS
PARAMETER Operating Current Power Gain Voltage Gain Noise Figure Input Return Loss Output Return Loss RF OUT - RF IN Isolation Power Input at 1dB compression Point
(Ta=25C, V+=1.9V, fin=400MHz, unless otherwise noted) SYMBOL Icc PG VG NF l S 11l l S 22l I SL P-1dB TEST CONDITIONS No signal Pin= - 40dBm Test circuit 1 Pin= - 40dBm Test circuit 2 Test Circuit 3 Pin= - 40dBm Test Circuit 4 Pin= - 40dBm Test Circuit 4 Pin= - 40dBm Test Circuit1 Test Circuit1 MIN. TYP. 0.8 15 30 2.2 -8 - 20 45 - 28 MAX. 1.0 UNIT mA dB dB dB dB dB dB dBm
Ver.2005-06-01
-2-
NJM2275
TEST CIRCUIT
These test circuits allow the measurement of all parameters described in "ELECTRICAL CHARACTERISTICS". Test Circuit 1 for Icc, PG , P-1dB and Pin vs. Pout
L in 27n
C in 1000p
RF IN 1
V+ 6 I REF 5 RF OUT 4 Cref 1000p
V+ Cv 1000p
SG (50)
GND 2 Cb BIAS CAP 1000p 3
CL 2p Lout Cout 15n 8p
RL 0 Spectrum Analyzer (Zin=50)
Test Circuit 2 for VG
L in 27n
C in 1000p
RF IN 1
V+ 6 I REF 5 RF OUT 4 Lout 27n Cref 1000p
V+ Cv 1000p
SG (50)
GND 2 Cb BIAS CAP 1000p 3
CL RL 1000p 1k Cout 4p Spectrum Analyzer (Zin=50)
PG and VG has the following relation. PG = Pout - Pin VG = (Pout + Prl ) - Pin where Pin = input level in dBm Pout = output level in dBm Prl = the loss caused by the voltage drop of RL. RL is 1000 . The input impedance of spectrum analyzer Zin is 50. Prl is calculated from Prl = 20log ( ( RL + Zin) / RL) Prl = 20 log (1050 / 50 )
Ver.2005-06-01
-3-
NJM2275
Test Circuit 3 for NF
L in 27n
C in 1000p
RF IN 1 GND 2
V+ 6 I REF 5 RF OUT 4 Cref 1000p
V+ Cv 1000p
Cb BIAS CAP 1000p 3
CL 2p Lout Cout 15n 8p NF m eter
Test Circuit 4 for lS11l and lS22l
L in 27n
C in 1000p
RF IN 1 GND 2
V+ 6 I REF 5 RF OUT 4 Cref 1000p
V+ Cv 1000p
Cb1 1000p
BIAS CAP 3
CL 2p Lout Cout 15n 8p Netw ork Analyzer
Test Circuit 5 for S-Parameters (this item is not specified in "ELECTRICAL CHARACTERISTICS")
RF IN 1 GND 2 Cb1 1000p Cb2 0.1u BIAS CAP 3
V+ 6 I REF 5 RF OUT 4 Cv1 1000p Cref1 1000p
V+ Cv2 0.1u Cref2 0.1u
Netw ork Analyzer
Port1 Port2
HP8753D
Ver.2005-06-01
-4-
NJM2275
EVALUATION PC BOARD
The evaluation board is useful for your design and to have more understanding of the usage and performance of this device. This circuit is the same as TEST CIRCUIT. Note that this board is not prepared to show the recommendation of pattern and parts layout. Circuit Diagram
V+ C in 1000p RF IN L in 27n RF IN 1 GND 2 Cb BIAS CAP 1000p 3 V+ 6 I REF 5 RF OUT 4 Lout Cout 15n 8p Cref 1000p Cv 1000p
CL 2p
RL 0 RF OUT
Evaluation PC Board
V
+
Lout Cv 1608 Cout 1608 Cin RFIN
1608 1608
Cl
1608
Rl
1608
RFOUT
Lin
1608
Cref
1608
1608
Cb
Pin1
This evaluation board is designed to have the maximum value of PG at 400MHz. By using the value of Test Circuit2, this board can have the maximum value of VG at 400MHz. Cref is effective to obtain good NF. However, if the ground has a large noisy signal, NF may become worse.
Ver.2005-06-01
-5-
NJM2275
TERMINAL FUNCTION (Ta=25C, V+=1.9 V)
Pin No. SYMBOL EQUIVARENT CIRCUIT
6
VOLTAGE RF Input
FUNCTION
2k
1
1
RF IN
3
1.09V
500
2
2
GND
6
--
--
Ground Bias Capacitance An external decoupling capacitor is placed between this pin and ground.
2k
1
3
BIAS CAP
3
0.33V
500
2
6
RF Output
5k
4 RF OUT
4
V+
2
6
5
IREF
5
70
0.75V
2
Reference of Current Source An external decoupling capacitor is placed between this pin and ground. An external resistor from this pin to ground can controls the reference current of current source and the related performances, such as NF and gain. Supply Voltage ESD protection transistor exists between V+ and ground.
6
6
V+
2
--
Ver.2005-06-01
-6-
NJM2275
TYPICAL CHARACTERISTICS ( Ta=25C, V+=1.9V, unless otherwise noted )
Operating Current Icc versus Supply Voltage V+
1.4
No signal
Power Gain PG versus Supply Voltage V+
25
Test circuit 1
1.2 1
Icc(mA)
25C
85C
20
PG(dB)
0.8 0.6 0.4 0.2 0 1 2 3 4 V+(V) 5 6 7
125C -40C
15
-40C 25C 85C 125C
10
5 1 2 3 4 V+(V) 5 6 7
-20 -22
P-1dB(dBm)
Pin at 1dB Compression Point P-1dB versus Supply Voltage V+
Test circuit 1
Voltage Gain VG versus Supply Voltage V+
40
Test circuit 2
-24 -26 -28 -30 -32 -34 1 2 3 4 V+(V) 5 6 7
125C 85C 25C -40C
35
VG(dB)
30
-40C 25C 85C 125C
25
20 1 2 3 4 V+ V 5 6 7
Noise Figure NF versus Supply Voltage V+
5.0 4.0
ISL(dB) NF(dB)
60
Test circuit 3
RF OUT-RF IN Isolation ISL versus Supply Voltage V+
Test circuit 1
55
125C 85C 25C -40C
125C 25C
3.0 2.0 1.0 0.0 1 2 3 4 V+ V 5 6
50
85C -40C
45
40 7 1 2 3 4 V+ V) 5 6 7
Ver.2005-06-01
-7-
NJM2275
1.4
No signal
Operating Current Icc versus Ambient Temperature Ta
Power Gain PG versus Ambient Temperature Ta
25
Test circuit 1
1.2 1
Icc(mA)
6V 4V 1.9V 1.8V
20
PG(dB)
6V
0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 Ta(C)
15
1.9V 1.8V
10
5
75 100 125
-50
-25
0
25
50 Ta(C)
75
100
125
-20 -22
P-1dB(dBm)
Pin at 1dB Compression Point P-1dB versus Ambient Temperature Ta
Test circuit 1
40
Voltage Gain VG versus Ambient Temperature Ta
Test circuit 2
-24
VG(dB)
35
1.8V,1.9V,6V
-26 -28 -30 -32 -34 -50 -25 0 25 50 Ta(C) 75
6V
30
1.9V 1.8V
25
20
100 125
-50
-25
0
25
50 Ta(C)
75
100
125
Noise Figure NF versus Ambient Temperature Ta
5.0
Test circuit 3
60
RF OUT-RF IN Isolation ISL versus Ambient Tempeature Ta
Test circuit 1
4.0
1.8V, 1.9V
55
ISL(dB)
6V 4V
NF (dB)
3.0 2.0
4V, 6V
50
1.9V
1.0 0.0 -50 -25 0 25 50 Ta(C) 75 100 125
45
1.8V
40 -50 -25 0 25 50 TaC 75 100 125
Ver.2005-06-01
-8-
NJM2275
10 0
Pout(dBm)
Output Power Pout/Operating Current Icc versus Input Power Pin
V+=1.9V fin=400MHz
12 10 8
Icc(mA)
PG (dB)
20 18 16 14 12 10 8 6 4 2 0 380
Power Gain PG/Noise Figure NF versus Frequency fin
10 9 8 7 5 4 6
Pout
PG
-10 -20 -30 Icc -40 -50 -60 -50 -40 -30 -20 Pin(dBm) -10 0 10 20
6 4 2 0
NF
3 2 1 0
390
400 fin (MHz)
410
420
0
Input Return Loss |S11| versus Supply Voltage V+
Test circuit 4
-10
Output Return Loss |S22| versus Supply Voltage V+
Test circuit 4
-40C
|S11| (dB)
-10
125C 85C 25C -40C
|S22| (dB)
-5
-15
125C 25C
-20
-15 0 1 2 3 V+ (V) 4 5 6 7
-25 0 1 2 3 V+ (V) 4 5
85C
6
7
0
Input Return Loss |S11| versus Ambient Temperature Ta(C)
Test circuit 4
-10
4V, 6V
Output Return Loss |S22| versus Ambient Temperature Ta(C)
Test circuit 4
|S11| (dB)
|S22| (dB)
-5
-15
1.8V 1.9V
-10
1.8V, 1.9V
-20
-15 -50 -25 0 25 50 Ta(C) 75 100 125
4V
6V
-25 -50 -25 0 25 50 Ta(C) 75 100 125
Ver.2005-06-01
-9-
NF (dB)
NJM2275
S Paramater (reference)
Input Reflection Coefficient S11 versus Frequency Test circuit 5
0 -2
0 -2
Output Reflection Coefficient S22 Test circuit 5 versus Frequency
S11 (dB)
-4 -6 -8 -10 0 200 400 600 Frequency (MHz) 800 1000
S22 (dB)
-4 -6 -8 -10 0 200 400 600 Frequency (MHz) 800 1000
0 -10 -20
Forward Transmission Coefficient S12 Test circuit 5 versus Frequency
10 8
Reverse Transmission Coefficient S21 Test circuit 5 versus Frequency
S12 (dB)
-40 -50 -60 -70 -80 -90 0 200 400 600 Frequency (MHz) 800 1000
S21 (dB)
-30
6 4 2 0 0 200 400 600 Frequency (MHz) 800 1000
MHz
50 100 300 322 400 430 500 700 1000
S11 S21 S12 S22 mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg) 0.95 -2.16 2.23 178.17 0.002 81.16 1.00 -0.42 0.91 -14.64 2.14 161.70 0.004 -162.40 0.99 -3.27 0.84 -45.83 1.99 130.37 0.003 1.93 0.99 -10.85 0.82 -46.06 2.02 125.33 0.004 109.90 0.98 -9.94 0.75 -57.89 1.92 112.13 0.003 115.87 0.98 -12.42 0.75 -61.93 1.91 107.89 0.003 143.47 0.98 -13.94 0.70 -71.95 1.82 96.80 0.005 62.77 0.98 -16.36 0.54 -100.22 1.61 67.85 0.002 160.15 0.96 -21.84 0.39 -146.15 1.35 26.94 0.008 60.40 0.92 -34.32
Ver.2005-06-01
- 10 -
NJM2275
S11
Test circuit 5
S22 +j50
Test circuit 5
+j50 +j25 +j100 +j25
+j100
0 25
50 150
1000MHz 800MHz 700MHz 500MHz 300MHz 400MHz
10MHz 40MHz 100MHz
0 25
50 150
10MHz 40MHz 100MHz 300MHz 400MHz 500MHz 700MHz 800MHz 1000MHz
-j25 -j50
-j100
-j25 -j50
-j100
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
Ver.2005-06-01
- 11 -

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