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Ordering number : ENA1523
SBT80-06JS
SANYO Semiconductors
DATA SHEET
SBT80-06JS
Applications
*
Schottky Barrier Diode (Twin Type * Cathode Common)
60V, 8A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
* * * * * *
Guaranteed up to Tj=150C. Low forward voltage (VF max=0.58V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, sine wave Tc=109C 50Hz sine wave, 1 cycle Conditions Ratings 60 66 8 80 --55 to +150 --55 to +150 Unit V V A A C C
Electrical Characteristics at Ta=25C
Parameter Reverse Voltage Forward Voltage Reverse Current Symbol VR VF IR Conditions IR=1mA, Tj=25C * IF=3.0A, Tj=25C * VR=30V, Tj=25C * Ratings min 60 0.58 0.1 typ max Unit V V mA
Note) * : Value per element
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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72209SD TK IM TC-00002023 No. A1523-1/3
SBT80-06JS
Continued from preceding page.
Parameter Interterminal Capacitance Thermal Resistance C Rth(j-c) Symbol Conditions VR=10V, Tj=25C * Junction-Case : Smoothed DC Ratings min typ 130 5.0 max Unit pF C / W
Note) * : Value per element
Package Dimensions
unit : mm (typ) 7525-001
Electrical Connection
1 4.5 2.8 3
10.0 3.5
3.2
7.2
1 : Anode 2 : Cathode 3 : Anode
2
16.0 3.6
1.6 1.2
14.0
0.75 123 0.7
1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS)
2.55
2.55
2.4
2 10 7
IF -- VF
Represented by max
Tj=
100 7 5
IR -- VR
ax C m 150 Tj= typ C 150
5 3 2 1.0 7 5 3 2 0.1
Reverse Current, IR -- mA
C 150 C 25
Forward Current, IF -- A
3 2 10 7 5 3 2 1.0 7 5 0
C 125
typ
C 100
typ
0
0.5
1.0
1.5 IT08385
10
20
30
40
50
60
70 IT08386
Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W
10
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 180 0.5 0 0 360
PR(AV) -- VRM
8
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
Rectangular wave
360
(4) (2)
(3)
(1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180
Rectangular wave
VR 360
(1) (2) (3)
(1)
6
4
Sine wave
VR
Sine wave
2 180 0 360 0 1 2 3 4 5 6 7 8 9 10
(4)
PR max at Tj=150C
10 20 30 40 50 60 70 IT08388
Average Output Current, IO -- A
IT08387
Peak Reverse Voltage, VRM -- V
No. A1523-2/3
SBT80-06JS
170 160
Tc -- IO
Interterminal Capacitance, C -- pF
Case Temperature, Tc -- C
150 140 130 120 110 100 90 80 70 0 1
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
5
C -- VR
f=100kHz
3
2
Rectangular wave
360
(4) (1) (2) (3)
100
Sine wave
180 360 2 3 4 5 6 7 8 9 10
7 5 1.0
2
3
5
7
10
2
3
5
Average Output Current, IO -- A
120
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave Tj=150C
100
Transient Thermal Resistance, Rth(j-c) -- C / W
IFSM -- t
IT08389 10 7 5
Reverse Voltage, VR -- V
Rth(j-c) -- t
7 100 IT08495
IS 20ms t
80
3 2
60
40
1.0 7 5 3 0.001 2 3
20
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5 70.01
23
5 7 0.1
23
5 7 1.0
23
Time, t -- s
ID01009
Time, t -- s
5 7 10 ID01010
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of July, 2009. Specifications and information herein are subject to change without notice.
PS No. A1523-3/3

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