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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *Collector Power Dissipation: PC= 40W(Max)@ TC= 25 APPLICATIONS *Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 300 120 8 6 40 UNIT V .cn mi e V V IC Collector Current-Continuous Collector Power Dissipation @ TC=25 A PC W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD363 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product hFE Classifications R 40-80 O 70-140 w w Y 120-240 w. sem isc VCB= 250V; IE= 0 IC= 1A; VCE= 5V IC= 0.5A; VCE= 5V .cn i 40 10 1.5 V 1.0 mA 240 MHz isc Websitewww.iscsemi.cn 2 |
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