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| IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 PSII 30/06* IC80 = VCES = VCE(sat)typ. = ECO-TOPTM 1 29 A 600 V 2.4 V N15 V9 V10 Q1 N1 V6 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C TC = 25C TC = 80C VGE = 15 V; RG = 33 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 33 ; TVJ = 125C non-repetitive TC = 25C Conditions VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.7 mA; VGE = VCE VCE = VCES; VCE = 0 V; VGE = 20 V et e sh er ta nd au dl ve stil ent ti t ta c n u opm te od el r ev pd Maximum Ratings 600 typical picture, for pin configuration see outline drawing *NTC optional V 20 V 42.5 29 60 VCES A A A 10 s W 130 Features (TVJ Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.4 2.9 2.9 * V V * * * * * * * * * * * * * * 4.5 6.5 V Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied VGE = 0 V; TVJ = 25C TVJ = 125C 0.6 1.7 mA mA Applications 100 nA Inductive load, TVJ = 125C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 50 50 270 40 1.4 1.0 16 ns ns ns ns mJ mJ AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) nF 0.96 K/W K/W 1.92 Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 30 19 A A Characteristic Values min. typ. max. 2.57 1.8 7 50 2.84 V V IF = 15 A; diF/dt = 400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight Conditions IISOL 1 mA; 50/60 Hz Mounting torque (M5) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev A ns 4.6 2.3 K/W K/W Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Maximum Ratings -40...+125 -40...+150 3000 C C V~ 3 26 50 Nm lb.in. m/s 2 Characteristic Values min. typ. max. 11.2 11.2 mm mm g 86 Package style and outline Dimensions in mm (1mm = 0.0394") 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 90 A 75 IC 90 A 75 VGE= 17V 15V 13V IC 60 TJ = 25C 11V 60 45 30 15 0 VGE = 17 V 15 V 13 V 11V 45 30 TJ = 125C 9V 25T60 15 0 9V 0 1 Fig. 1 Typ. output characteristics 90 75 A IC 60 45 30 15 0 TJ = 125C 4 6 Fig. 3 Typ. transfer characteristics 20 V et he r se ta nd da l u e til t iv s tt en ta c n u opm te od el r ev pd 2 3 4 5 V 25T60 6 0 1 2 3 4 5V 6 VCE VCE Fig. 2 Typ. output characteristics 90 A 75 60 45 30 15 VCE = 20V IF TJ = 125C TJ = 25C TJ = 25C 25T60 0 25T60 8 10 12 14 V 16 0,0 0,5 1,0 1,5 V 2,0 VGE VF Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A 150 120 ns 90 trr 15 VGE IRM trr 30 10 VCE = 300 V IC = 30 A 20 10 IRM 25T60 5 TJ = 125C VR = 300 V IF = 30 A 60 30 MUBW3006A7 0 0 40 80 120 QG nC 0 160 0 200 400 600 -di/dt 800 A/s 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 VCE = 300V mJ VGE = 15V 8 80 tr td(on) Eon ns 60 t 2,0 mJ Eoff 1,5 VCE = 300V VGE = 15V TVJ = 125C Eoff 400 ns 300 t Eon R = 33 6G TVJ = 125C 4 40 1,0 RG = 33 td(off) 200 2 0 0 Fig. 7 Typ. turn on energy and switching Eon VCE = 300V mJ VGE = 15V = 30A I 3C TVJ = 125C 4 2 1 0 0 10 Fig. 9 Typ. turn on energy and switching et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd 20 0,5 100 tf 25T60 20 40 60 A 0 0,0 25T60 0 20 40 60 A 0 IC IC Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 400 ns 300 t td(off) td(on) 80 ns tr 60 t Eoff VCE = 300 V mJ V = 15 V GE I = 30 A 1,5 C TVJ = 125C 2,0 Eon Eoff 200 1,0 40 0,5 100 25T60 tf 20 30 40 50 60 70 80 20 0,0 25T60 0 10 20 30 40 50 60 70 80 0 RG RG Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor diode IGBT 80 A ICM 10 K/W ZthJC 1 60 0,1 40 0,01 20 RG = 33 TVJ = 125C 25T60 0,001 single pulse 0 0 100 200 300 400 500 600 VCE 700 V 0,0001 0,00001 0,0001 0,001 VDI...50-06P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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