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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4427 DESCRIPTION *High Breakdown Voltage: V(BR)CEO= 800V(Min) *Fast Switching speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse w ww scs .i V 800 V 7 V 4.5 A 15 A 2 A 50 W .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC=0 IC= 2A; IB= 0.4A B 2SC4427 MIN 800 1100 7 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V A A IC= 2A; IB= 0.4A B VCB= 800V; IE= 0 VEB= 5V; IC= 0 Output Capacitance Current-Gain--Bandwidth Product Switching times ton tstg tf w w scs .i w IC=0.3A ; VCE= 5V IC= 1.5A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0MHz .cn mi e 10 8 90 15 pF MHz IC= 0.3A ; VCE= 10V Turn-on Time Storage Time Fall Time IC= 3A , IB1= 0.6A; IB2= -1.2A RL= 133; VCC= 400V 0.5 3.0 0.3 s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Websitewww.iscsemi.cn 2 |
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