 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES Ideally suited for automatic insertion. Power dissipation.(PC=200mW) Pb Lead-free APPLICATIONS General purpose switching and amplification application. ORDERING INFORMATION Type No. BC856W BC857W BC858W Marking 3As/3Bs 3E/3F/3G 3J/3K/3L SOT-323 Package Code SOT-323 SOT-323 SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO Collector-Emitter Voltage VCEO VEBO IC PC Tj,Tstg Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Collector-Base Voltage BC856W BC857W BC858W BC856W BC857W BC858W Value -80 -50 -30 -65 -45 -30 -5 -100 200 -65~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTF046 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol Test conditions IC=-10A,IE=0 V(BR)CBO IC=-10mA,IB=0 V(BR)CEO BC856W BC857W BC858W BC856W BC857W BC858W MIN -80 -50 -30 -65 -45 -30 -5 MAX UNIT V V V(BR)EBO IE=-1A,IC=0 BC856W BC857W BC858W BC856W BC857W BC858W VCB=-70V,IE=0 VCB=-45V,IE=0 VCB=-25V,IE=0 VCE=-60V,IB=0 VCE=-40V,IB=0 VCE=-25V,IB=0 V ICBO -0.1 A Collector cut-off current ICEO -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 VCE=-5V,IC=-2mA BC856AW,BC857AW BC856BW,BC857BW,BC858BW BC857CW,BC858CW IC=-100mA, IB= -5mA IC=-100mA, IB= -5mA VCE=-5V,IC=-10mA,f=100MHz VCB=-10V,f=1MHz 100 -0.1 A DC current gain hFE 125 220 420 250 475 800 -0.5 -1.1 mV V MHz 4.5 pF Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector capacitance VCE(sat) VBE(sat) fT CC Document number: BL/SSSTF046 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim A B C D E G H J K Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 1.0Typical 0.1Typical All Dimensions in mm PACKAGE INFORMATION Device BC856W/BC857W/BC858W Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF046 Rev.A www.galaxycn.com 3 |
Price & Availability of BC857W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |