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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220F package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT12AX Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature GE S Open collector EMIC DUC ON VALUE 1000 450 9 8 20 4 6 TOR UNIT V V V A A A A W ae ae TC=25ae 23 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 55 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BUT12AX SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 450 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A VCE=Rated VCES ;VBE=0 Tj=125ae VEB=9V; IC=0 1.5 1.0 3.0 10 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain Switching times resistive load ton IC=1A ; VCE=5V 10 35 Turn-on time ts Storage time tf Fall time HAN INC SEM GE IC=5A; IB1=-IB2=1A OND IC TOR UC 1.0 |I 4.0 |I 0.8 |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT12AX SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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