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| SMD Type TrenchMOSTM standard level FET KUK7604-40A TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features TrenchMOSTM technology Q101 compliant Standard level compatible. + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 175 rated + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage (DC) drain-gate voltage (DC) RGS = 20 kU gate-source voltage (DC) drain current (DC) Tmb = 25 ; VGS = 10 V drain current (DC) Tmb = 100 ; VGS = 10 V peak drain current *1 total power dissipation Tmb = 25 storage temperature operating junction temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *2 non-repetitive avalanche energy thermal resistance from junction to ambient thermal resistance from junction to mounting base *1 Tmb = 25 ; pulsed; tp 10 is; 40 V; VGS = 10 V; RGS = 50U,starting Tmb= 25 IDM Ptot Tstg Tj IDR IDRM WDSS Rth(j-a) Rth(j-mb) Symbol VDS VDGR VGS ID Rating 40 40 20 198 75 794 300 -55 to 175 -55 to 175 198 75 794 1.6 50 0.5 A A A J K/W K/W Unit V V V A A A W *2 unclamped inductive load; ID =75 A;VDS 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7604-40A Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 drain-source leakage current gate-source leakage current drain-source on-state resistance total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge IDSS IGSS RDSon Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr from drain lead 6 mm from package to centre of die VDD = 30 V; RL = 1.2U;VGS = 10 V; RG = 10U VGS = 0 V; VDS = 25 V;f = 1 MHz VGS = 10 V; VDD = 32 V;ID = 25 A VDS = 40 V; VGS = 0 V;Tj = 25 VDS = 40 V; VGS = 0 V;Tj = 175 VGS = 20 V; VDS = 0 V Transistors IC Min 40 36 2 1 Typ Max Unit V V 3 4 V V 4.4 0.05 10 500 2 3.9 100 4.5 8.5 117 19 50 4300 1400 800 33 110 151 76 4.5 2.5 5730 1680 1100 V mA mA nA mU mU nC nC nC pF pF pF ns ns ns ns nH nH nH VGS = 10 V; ID = 25 A;Tj = 25 VGS = 10 V; ID = 25 A;Tj = 175 from source lead to source bond pad IS = 40 A; VGS = 0 V; IS = 20 A;dIS/dt = -100 A/is VGS = -10 V; VDS = 30 V 7.5 0.85 96 224 1.2 V ns nC 2 www.kexin.com.cn |
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