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| MMBTSC3838W NPN Silicon Epitaxial Planar Transistor for high frequency amplifier application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 20 11 3 50 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Current Gain Group R S Symbol hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob NF Min. 56 120 20 11 3 1.4 Typ. 3.2 3.5 Max. 160 240 0.5 0.5 0.5 1.5 Unit A A V V V V GHz pF dB Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 2 V Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Emitter Saturation Voltage at IC = 10 mA, IB = 5 mA Transition Frequency at VCE = 10 V, IE = 10 mA, f = 500 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 6 V, IC = 2 mA , f = 500 MHz, Rg = 50 SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/05/2007 MMBTSC3838W SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/05/2007 |
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