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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Color TV horizontal deflection output *Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 6 V 5 A 16 A 100 W .cn mi e IC Collector Current- Continuous ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1709 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V tf Fall Time w w. w IC= 4A , IB1= 0.8A ; IB2= -1.6A PW=20s; Duty Cycle1% .cn mi cse is 8 40 130 mA 0.5 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1709
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