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AOD4187 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications -RoHS Compliant -Halogen Free*
Features
VDS (V) = -40V ID = -45A RDS(ON) < 17m RDS(ON) < 23m (VGS = -10V) (VGS = -10V) (VGS = -4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G S G S G S
Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
Maximum -40 20 -45 -30 -100 -9 -7 -36 65 60 30 2.5 1.6 -55 to 175
Units V V
VGS TC=25 C TC=100 C TC=25 C TC=100 C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM
A
A mJ W W C
Repetitive avalanche energy L=0.1mH C TC=25 C Power Dissipation B Power Dissipation A TC=100 C TA=25 C TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 41 2
Max 20 50 2.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AOD4187
Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-40V, VGS=0V C TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-12A IS=-1A,VGS=0V C TJ=125 -1.7 -100 14 21 18 40 -0.7 -1 -50 1960 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 185 130 2 35 VGS=-10V, VDS=-20V, ID=-12A 16 5.5 7 VGS=-10V, VDS=-20V, RL=1.6, RGEN=3 IF=-12A, dI/dt=500A/s 14 40 2350 240 185 5.5 42 20 6.6 9.7 9.6 29 56 19.2 17 49 21 60 2850 320 260 11 50 25 8 14 17 26 23 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=500A/s
A: The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 The C. Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150 The value in any given application depends on C. the user's specific board design, and the maximum temperature of 175 may be used if the PCB allows i t. C C, B. The power dissipation PD is based on TJ(MAX)=175 using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 Ratings are based on low frequency and duty cycles to keep C. C. initial TJ =25 D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C.The SOA curve provides a single pulse rating . a maximum junction temperature of TJ(MAX)=175 G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1: Oct-2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 -10V 80 -6V -5V -4.5V 40 50 VDS=-5V
60 -ID(A) -ID(A) -4V 40
30
20
20 VGS=-3.5V 0 0 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 1 5
10
125C 25C
0 1.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 2 2.5 4.5
26 Normalized On-Resistance
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=-12A 10 1 125C -IS (A) 0.1 0.01 25C 25C 0.001 VGS=-4.5V ID=-8A VGS=-10V ID=-12A
22 RDS(ON) (m )
18
VGS=-4.5V
14 VGS=-10V 10
6
38 34 30 26 RDS(ON) (m ) 22 18 14 10 6 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C
TC=100 C TA=25 C
-55 to 175
0.0001 0.00001 0.0 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 5 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 45 VDS=-20V ID=-12 A 3200 2800 Capacitance (pF) 2400 2000 1600 1200 800 400 0 0 5 15 20 25 30 35 -VDS (Volts) Figure 8: Capacitance Characteristics 10 40 Crss Coss Ciss
1000
1000 TJ(Max)=175C TC=25C RDS(ON) limited 10s Power (W) 100s 1ms
100 -ID (Amps)
10
1
DC
100
10ms
0.1
TJ(Max)=175C TC=25C 10 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.01 0.01
1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.1
100
10 D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient Thermal Resistance
TC=100 C TA=25 C
0.1 PD
-55 to 175
Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 -ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 100 80 60 40 20 0 0.000001 TA=150C TA=100C TA=125C 70 60 50 40 30 20 10 0 0.00001 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating -ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F) Power (W)
10000 TJ(Max)=150C TA=25C
1000
100
10
1 1E-04 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4187
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds Isd Vgs Ig
L
VDC
+ Vdd -Vds
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
Charge
ton td(on) tr td(off) toff tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
EAR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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