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| CLE400F Four leaded Multiple Emitter Chip Surface Mount Package 0.056 (1.42) 025 (0.63) 0.025 (0.63) 0.012 (0.30) 2 1 0.110 (2.81) 0.110 (2.81) PIN 1 MARK (R) Clairex Technologies, Inc. March, 2002 0.006 (0.15) 0.028 (0.71) 2 3 4 0.006 (0.15) 0.063 (1.60) 0.275 0.010 (6.99 0.25) 0.063 (1.60) 0.075 (1.89) 3 4 0.038 (0.97) All dimensions are in inches (millimeters). Unless otherwise indicated, tolerance is 0.005 (0.12) 0.066 (0.68) 0.069 (1.75) 0.056 (1.42) 0.032 (0.81) 1 features * 70 emission angle * wide variety of chip combinations * wide variety of lenses and apertures absolute maximum ratings (TA = 25C unless otherwise stated) description The CLE400F can contain three 850 nm IRED chips which feature double/ double heterojunction (DDH) notes: construction for increased quantum 1. For 5 seconds maximum efficiency and reliability. This device 2. Derate linearly 0.213mA/C from 25C free air temperature to TA = +100C. is one example of a very broad line of 3. Derate linearly 0.85mW/C from 25C free air temperature to TA = +100C. devices made possible by four leaded package configuration. One to three chips can be attached. Multiple chip devices can be series or parallel connected. Wavelengths can range from ultra-violet (390nm) through the visible spectrum into the near infrared (940nm). Also different lenses, apertures and lead configurations are available. The standard lensing is clear epoxy. storage temperature........................................................................-40C to +100C operating temperature.....................................................................-40C to +100C lead soldering temperature(1)...........................................................................260C (2) continuous forward current ..............................................................20mA/per chip peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 1A reverse voltage..................................................................................................... 5V continuous power dissipation(3) .......................................................................80mW electrical characteristics (TA = 25C unless otherwise noted) symbol PO VF IR p BW HP parameter Total power output(4) Forward voltage Reverse current Peak wavelength emission Spectral bandwidth at half power points Emission angle at half power points min 9.0 - typ 13.0 850 60 140 max 1.4 10 - units mW V A nm nm deg. test conditions IF = 60mA (total cathode current) IF = 20mA per chip VR = 5V IF = 20mA IF = 20mA IF = 20mA note: 4. Power output is measured in an integrating sphere. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 4/17/07 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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